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Title: Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

Abstract

Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. Furthermore, the difference in the two materials may be due to the occupation of the substrate acceptor states in the presence of the midgap state EL2.

Authors:
 [1];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1439176
Alternate Identifier(s):
OSTI ID: 1435875
Report Number(s):
NREL/JA-5K00-71303
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 17; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; raman spectra; excitation energies; semiconductors; excitons; band gap; epitaxy; raman scattering

Citation Formats

Fluegel, B., Rice, A. D., and Mascarenhas, A.. Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs. United States: N. p., 2018. Web. doi:10.1063/1.5029467.
Fluegel, B., Rice, A. D., & Mascarenhas, A.. Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs. United States. doi:10.1063/1.5029467.
Fluegel, B., Rice, A. D., and Mascarenhas, A.. Thu . "Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs". United States. doi:10.1063/1.5029467.
@article{osti_1439176,
title = {Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs},
author = {Fluegel, B. and Rice, A. D. and Mascarenhas, A.},
abstractNote = {Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. Furthermore, the difference in the two materials may be due to the occupation of the substrate acceptor states in the presence of the midgap state EL2.},
doi = {10.1063/1.5029467},
journal = {Journal of Applied Physics},
number = 17,
volume = 123,
place = {United States},
year = {Thu May 03 00:00:00 EDT 2018},
month = {Thu May 03 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on May 3, 2019
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