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Title: Large resistance change on magnetic tunnel junction based molecular spintronics devices

Abstract

Here, molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

Authors:
ORCiD logo [1];  [2]
  1. Univ. of the District of Columbia, Washington, D.C. (United States); Univ. of Kentucky, Lexington, KY (United States)
  2. Univ. of the District of Columbia, Washington, D.C. (United States)
Publication Date:
Research Org.:
Univ. of the District of Columbia, Washington, D.C. (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation (NA-20)
OSTI Identifier:
1439170
Grant/Contract Number:  
NA0002687
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Magnetism and Magnetic Materials
Additional Journal Information:
Journal Volume: 453; Journal Issue: C; Journal ID: ISSN 0304-8853
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Molecular spintronics; Magnetic tunnel junctions; Magnetic molecules

Citation Formats

Tyagi, Pawan, and Friebe, Edward. Large resistance change on magnetic tunnel junction based molecular spintronics devices. United States: N. p., 2018. Web. doi:10.1016/j.jmmm.2018.01.024.
Tyagi, Pawan, & Friebe, Edward. Large resistance change on magnetic tunnel junction based molecular spintronics devices. United States. doi:10.1016/j.jmmm.2018.01.024.
Tyagi, Pawan, and Friebe, Edward. Fri . "Large resistance change on magnetic tunnel junction based molecular spintronics devices". United States. doi:10.1016/j.jmmm.2018.01.024. https://www.osti.gov/servlets/purl/1439170.
@article{osti_1439170,
title = {Large resistance change on magnetic tunnel junction based molecular spintronics devices},
author = {Tyagi, Pawan and Friebe, Edward},
abstractNote = {Here, molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.},
doi = {10.1016/j.jmmm.2018.01.024},
journal = {Journal of Magnetism and Magnetic Materials},
issn = {0304-8853},
number = C,
volume = 453,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

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Cited by: 1 work
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Figures / Tables:

Fig. 1 Fig. 1: MTJMSD fabrication steps: (a) deposit the bottom ferromagnetic (bottom-FM) electrode on the insulating substrate, (b) creates photoresist (PR) cavity pattern for the depostion of (c) ~2nm AlOx and (d) top ferromagnetic electrode (top-FM). (e) Liftoff step produces and MTJ with the exposed sides where (f) OMC molecules aremore » chemically bridged across the AlOx insulator to produce an MTJMSD. (g) NiFe films is determined by reflectivity study. (h) OMC were connected and disconnected on a tunnel junction to retain bare tunnel junction transport attributes. Fabrication steps for magnetic studies of MTJMSD. (i) In ~7000 photoresist cavities thin films were deposited to mass produce (j)an array of cylindrical MTJs with exposed edge. (k) Individual MTJ cylinders were transformed into MTJMSD by attaching OMCs.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.