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Title: Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures

Journal Article · · Journal of Nuclear Materials

Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 115 Xe/nm2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 μm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the dose range from 6 to 20 dpa. A transformation of homonuclear C-C bonds from sp3 to sp2 hybridization is observed in the irradiated films, which may be partly responsible for the observed grain size saturation. The results from this study may have a significant impact on synthesis of nanograins in amorphous SiC and other similar materials with effective control of grain size and density by ion irradiation.

Research Organization:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
1439029
Report Number(s):
PNNL-SA-130017; 49576; AT2030110
Journal Information:
Journal of Nuclear Materials, Vol. 505, Issue C; ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
United States
Language:
English

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Cited By (4)

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Microstructure investigation of damage recovery in SiC by swift heavy ion irradiation journal May 2019
Effect of proton irradiation on anatase TiO2 nanotube anodes for lithium-ion batteries journal July 2019
Dissolution corrosion of 4H‐SiC in lead‐bismuth eutectic at 550°C journal April 2019

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