skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures

Abstract

Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 115 Xe/nm2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 μm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the dose range from 6 to 20 dpa. A transformation of homonuclear C-C bonds from sp3 to sp2 hybridization is observed in the irradiated films, which may be partly responsible for the observed grain size saturation. The results from this study may have a significant impact on synthesis of nanograins in amorphous SiC and other similar materials with effective control of grain size and density by ion irradiation.

Authors:
; ORCiD logo; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1439029
Report Number(s):
PNNL-SA-130017
Journal ID: ISSN 0022-3115; 49576; AT2030110
DOE Contract Number:
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Nuclear Materials; Journal Volume: 505; Journal Issue: C
Country of Publication:
United States
Language:
English
Subject:
phase transformation; SiC; ion irradiation; Environmental Molecular Sciences Laboratory

Citation Formats

Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, and Wang, Tieshan. Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures. United States: N. p., 2018. Web. doi:10.1016/j.jnucmat.2018.04.005.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, & Wang, Tieshan. Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures. United States. doi:10.1016/j.jnucmat.2018.04.005.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, and Wang, Tieshan. Sun . "Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures". United States. doi:10.1016/j.jnucmat.2018.04.005.
@article{osti_1439029,
title = {Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures},
author = {Zhang, Limin and Jiang, Weilin and Ai, Wensi and Chen, Liang and Wang, Tieshan},
abstractNote = {Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 115 Xe/nm2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 μm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the dose range from 6 to 20 dpa. A transformation of homonuclear C-C bonds from sp3 to sp2 hybridization is observed in the irradiated films, which may be partly responsible for the observed grain size saturation. The results from this study may have a significant impact on synthesis of nanograins in amorphous SiC and other similar materials with effective control of grain size and density by ion irradiation.},
doi = {10.1016/j.jnucmat.2018.04.005},
journal = {Journal of Nuclear Materials},
number = C,
volume = 505,
place = {United States},
year = {Sun Jul 01 00:00:00 EDT 2018},
month = {Sun Jul 01 00:00:00 EDT 2018}
}