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Title: Gate-Induced Metal–Insulator Transition in MoS 2 by Solid Superionic Conductor LaF 3

Abstract

Electric-double-layer (EDL) gating with liquid electrolyte has been a powerful tool widely used to explore emerging interfacial electronic phenomena. Due to the large EDL capacitance, a high carrier density up to 10 14 cm –2 can be induced, directly leading to the realization of field-induced insulator to metal (or superconductor) transition. However, the liquid nature of the electrolyte has created technical issues including possible side electrochemical reactions or intercalation, and the potential for huge strain at the interface during cooling. In addition, the liquid coverage of active devices also makes many surface characterizations and in situ measurements challenging. Here, we demonstrate an all solid-state EDL device based on a solid superionic conductor LaF 3, which can be used as both a substrate and a fluorine ionic gate dielectric to achieve a wide tunability of carrier density without the issues of strain or electrochemical reactions and can expose the active device surface for external access. Based on LaF 3 EDL transistors (EDLTs), we observe the metal–insulator transition in MoS 2. Interestingly, the well-defined crystal lattice provides a more uniform potential distribution in the substrate, resulting in less interface electron scattering and therefore a higher mobility in MoS 2 transistors. Finally, thismore » result shows the powerful gating capability of LaF 3 solid electrolyte for new possibilities of novel interfacial electronic phenomena.« less

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1];  [3];  [4]; ORCiD logo [5]
  1. Stanford Univ., CA (United States). Dept. of Material Science and Engineering
  2. Stanford Univ., CA (United States). Dept. of Material Science and Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Nanjing Univ. (China). National Lab. of Solid-State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures
  3. Stanford Univ., CA (United States). Dept. of Material Science and Engineering; Beihang Univ., Beijing (China). School of Material Science and Engineering
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States). Dept. of Applied Physics
  5. Stanford Univ., CA (United States). Dept. of Material Science and Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1438821
Grant/Contract Number:
AC02-76SF00515
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 4; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electric-double-layer transistor; metal−insulator transition; Solid electrolyte; two-dimensional materials

Citation Formats

Wu, Chun-Lan, Yuan, Hongtao, Li, Yanbin, Gong, Yongji, Hwang, Harold Y., and Cui, Yi. Gate-Induced Metal–Insulator Transition in MoS2 by Solid Superionic Conductor LaF 3. United States: N. p., 2018. Web. doi:10.1021/acs.nanolett.7b05377.
Wu, Chun-Lan, Yuan, Hongtao, Li, Yanbin, Gong, Yongji, Hwang, Harold Y., & Cui, Yi. Gate-Induced Metal–Insulator Transition in MoS2 by Solid Superionic Conductor LaF 3. United States. doi:10.1021/acs.nanolett.7b05377.
Wu, Chun-Lan, Yuan, Hongtao, Li, Yanbin, Gong, Yongji, Hwang, Harold Y., and Cui, Yi. Fri . "Gate-Induced Metal–Insulator Transition in MoS2 by Solid Superionic Conductor LaF 3". United States. doi:10.1021/acs.nanolett.7b05377.
@article{osti_1438821,
title = {Gate-Induced Metal–Insulator Transition in MoS2 by Solid Superionic Conductor LaF 3},
author = {Wu, Chun-Lan and Yuan, Hongtao and Li, Yanbin and Gong, Yongji and Hwang, Harold Y. and Cui, Yi},
abstractNote = {Electric-double-layer (EDL) gating with liquid electrolyte has been a powerful tool widely used to explore emerging interfacial electronic phenomena. Due to the large EDL capacitance, a high carrier density up to 1014 cm–2 can be induced, directly leading to the realization of field-induced insulator to metal (or superconductor) transition. However, the liquid nature of the electrolyte has created technical issues including possible side electrochemical reactions or intercalation, and the potential for huge strain at the interface during cooling. In addition, the liquid coverage of active devices also makes many surface characterizations and in situ measurements challenging. Here, we demonstrate an all solid-state EDL device based on a solid superionic conductor LaF3, which can be used as both a substrate and a fluorine ionic gate dielectric to achieve a wide tunability of carrier density without the issues of strain or electrochemical reactions and can expose the active device surface for external access. Based on LaF3 EDL transistors (EDLTs), we observe the metal–insulator transition in MoS2. Interestingly, the well-defined crystal lattice provides a more uniform potential distribution in the substrate, resulting in less interface electron scattering and therefore a higher mobility in MoS2 transistors. Finally, this result shows the powerful gating capability of LaF3 solid electrolyte for new possibilities of novel interfacial electronic phenomena.},
doi = {10.1021/acs.nanolett.7b05377},
journal = {Nano Letters},
number = 4,
volume = 18,
place = {United States},
year = {Fri Mar 23 00:00:00 EDT 2018},
month = {Fri Mar 23 00:00:00 EDT 2018}
}

Journal Article:
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