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Title: Apparatus and methods for memory using in-plane polarization

Abstract

A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Chicago Operations Office, Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1438442
Patent Number(s):
9,959,920
Application Number:
15/453,548
Assignee:
Massachusetts Institute of Technology (Cambridge, MA) CHO
DOE Contract Number:
SC0010526
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Mar 08
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Junwei, Chang, Kai, Ji, Shuai-Hua, Chen, Xi, and Fu, Liang. Apparatus and methods for memory using in-plane polarization. United States: N. p., 2018. Web.
Liu, Junwei, Chang, Kai, Ji, Shuai-Hua, Chen, Xi, & Fu, Liang. Apparatus and methods for memory using in-plane polarization. United States.
Liu, Junwei, Chang, Kai, Ji, Shuai-Hua, Chen, Xi, and Fu, Liang. Tue . "Apparatus and methods for memory using in-plane polarization". United States. doi:. https://www.osti.gov/servlets/purl/1438442.
@article{osti_1438442,
title = {Apparatus and methods for memory using in-plane polarization},
author = {Liu, Junwei and Chang, Kai and Ji, Shuai-Hua and Chen, Xi and Fu, Liang},
abstractNote = {A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2018},
month = {Tue May 01 00:00:00 EDT 2018}
}

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