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Title: Tuning metal-insulator behavior in LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

Abstract

Here, we present electrical and structural characterization of epitaxial LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO 3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

Authors:
 [1];  [2];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [3];  [4]; ORCiD logo [2];  [1]
  1. Univ. of Texas-Arlington, Arlington, TX (United States)
  2. North Carolina State Univ., Raleigh, NC (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. New York Univ. Shanghai, Shanghai (China)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1438310
Report Number(s):
BNL-205666-2018-JAAM
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
SC0012704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
29 ENERGY PLANNING, POLICY AND ECONOMY; LaTiO3 SrTiO3 heterostructure; Fermi liquid; Mott driven transition

Citation Formats

Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., and Ngai, Joseph H. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness. United States: N. p., 2018. Web. doi:10.1063/1.5018069.
Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., & Ngai, Joseph H. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness. United States. doi:10.1063/1.5018069.
Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., and Ngai, Joseph H. Mon . "Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness". United States. doi:10.1063/1.5018069.
@article{osti_1438310,
title = {Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness},
author = {Ahmadi-Majlan, Kamyar and Chen, Tongjie and Lim, Zheng Hui and Conlin, Patrick and Hensley, Ricky and Chrysler, Matthew and Su, Dong and Chen, Hanghui and Kumah, Divine P. and Ngai, Joseph H.},
abstractNote = {Here, we present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.},
doi = {10.1063/1.5018069},
journal = {Applied Physics Letters},
number = 19,
volume = 112,
place = {United States},
year = {Mon May 07 00:00:00 EDT 2018},
month = {Mon May 07 00:00:00 EDT 2018}
}

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Works referenced in this record:

Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces
journal, September 2011

  • Li, Lu; Richter, C.; Mannhart, J.
  • Nature Physics, Vol. 7, Issue 10, p. 762-766
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Oxide Interfaces--An Opportunity for Electronics
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Metal-insulator transitions
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