Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions
Journal Article
·
· Journal of Vacuum Science and Technology A
OSTI ID:14382
Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 14382
- Report Number(s):
- SAND99-2842J; TRN: US0111024
- Journal Information:
- Journal of Vacuum Science and Technology A, Other Information: Submitted to Journal of Vacuum Science and Technology A; PBD: 3 Nov 1999
- Country of Publication:
- United States
- Language:
- English
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