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Title: Stable organic thin-film transistors

Abstract

Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperatureovertimeperiods upto5.9×105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (mc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V-1 s-1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Georgia Inst. of Technology, Atlanta, GA (United States)
Publication Date:
Research Org.:
North Carolina State Univ., Raleigh, NC (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1438013
Grant/Contract Number:  
NA0002576
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Science Advances
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2375-2548
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Jia, Xiaojia, Fuentes-Hernandez, Canek, Wang, Cheng-Yin, Park, Youngrak, and Kippelen, Bernard. Stable organic thin-film transistors. United States: N. p., 2018. Web. doi:10.1126/sciadv.aao1705.
Jia, Xiaojia, Fuentes-Hernandez, Canek, Wang, Cheng-Yin, Park, Youngrak, & Kippelen, Bernard. Stable organic thin-film transistors. United States. doi:10.1126/sciadv.aao1705.
Jia, Xiaojia, Fuentes-Hernandez, Canek, Wang, Cheng-Yin, Park, Youngrak, and Kippelen, Bernard. Fri . "Stable organic thin-film transistors". United States. doi:10.1126/sciadv.aao1705. https://www.osti.gov/servlets/purl/1438013.
@article{osti_1438013,
title = {Stable organic thin-film transistors},
author = {Jia, Xiaojia and Fuentes-Hernandez, Canek and Wang, Cheng-Yin and Park, Youngrak and Kippelen, Bernard},
abstractNote = {Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperatureovertimeperiods upto5.9×105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (mc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V-1 s-1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.},
doi = {10.1126/sciadv.aao1705},
journal = {Science Advances},
issn = {2375-2548},
number = 1,
volume = 4,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
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Cited by: 8 works
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Figures / Tables:

Fig. 1. Fig. 1. : μGeneral electrical properties and environmental stability. (A) The structure of top-gate bottom-contact μc-OTFTs with gate dielectric layers of CYTOP/NL. The semiconductor layers of A_33 and C_33 are TIPS-pentacene/PTAA blend and diF-TES-ADT/PTAA blend, respectively. (B) Transfer characteristics of as-fabricated μc-OTFTs of A_33 (left) and C_33 (right). (C) Electricalmore » parameters of A_33, C_33, and B_44. (D) Environmental stability under continuous dc-bias stress for mc-OTFTs under different ambient conditions.« less

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Works referenced in this record:

Very low bias stress in n -type organic single-crystal transistors
journal, March 2012

  • Barra, M.; Di Girolamo, F. V.; Minder, N. A.
  • Applied Physics Letters, Vol. 100, Issue 13
  • DOI: 10.1063/1.3698341

49.1: Invited Paper: Emergent Oxide TFT Technologies for Next-Generation AM-OLED Displays
journal, June 2011

  • Arai, Toshiaki; Sasaoka, Tatsuya
  • SID Symposium Digest of Technical Papers, Vol. 42, Issue 1
  • DOI: 10.1889/1.3621424

Top-gate organic field-effect transistors fabricated on paper with high operational stability
journal, February 2017


High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives
journal, December 2016

  • Nikolka, Mark; Nasrallah, Iyad; Rose, Bradley
  • Nature Materials, Vol. 16, Issue 3
  • DOI: 10.1038/nmat4785

Organic small molecule field-effect transistors with Cytop™ gate dielectric: Eliminating gate bias stress effects
journal, February 2007

  • Kalb, W. L.; Mathis, T.; Haas, S.
  • Applied Physics Letters, Vol. 90, Issue 9
  • DOI: 10.1063/1.2709894

Stable Organic Field-Effect Transistors for Continuous and Nondestructive Sensing of Chemical and Biologically Relevant Molecules in Aqueous Environment
journal, January 2014

  • Yun, Minseong; Sharma, Asha; Fuentes-Hernandez, Canek
  • ACS Applied Materials & Interfaces, Vol. 6, Issue 3
  • DOI: 10.1021/am404460j

Systematic Reliability Study of Top-Gate p- and n-Channel Organic Field-Effect Transistors
journal, February 2014

  • Hwang, Do Kyung; Fuentes-Hernandez, Canek; Fenoll, Mathieu
  • ACS Applied Materials & Interfaces, Vol. 6, Issue 5
  • DOI: 10.1021/am405424k

Origin of the bias stress instability in single-crystal organic field-effect transistors
journal, August 2010


Low-voltage flexible organic complementary inverters with high noise margin and high dc gain
journal, January 2009

  • Zhang, Xiao-Hong; Potscavage, William J.; Choi, Seungkeun
  • Applied Physics Letters, Vol. 94, Issue 4
  • DOI: 10.1063/1.3077025

Further considerations of non symmetrical dielectric relaxation behaviour arising from a simple empirical decay function
journal, January 1971

  • Williams, G.; Watts, D. C.; Dev, S. B.
  • Transactions of the Faraday Society, Vol. 67
  • DOI: 10.1039/tf9716701323

High-Mobility Field-Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers
journal, February 2014


Design of High-Mobility Diketopyrrolopyrrole-Based π-Conjugated Copolymers for Organic Thin-Film Transistors
journal, May 2015


High mobility diketopyrrolopyrrole (DPP)-based organic semiconductor materials for organic thin film transistors and photovoltaics
journal, January 2013

  • Li, Yuning; Sonar, Prashant; Murphy, Leanne
  • Energy & Environmental Science, Vol. 6, Issue 6
  • DOI: 10.1039/c3ee00015j

Water-stable organic transistors and their application in chemical and biological sensors
journal, August 2008

  • Roberts, M. E.; Mannsfeld, S. C. B.; Queralto, N.
  • Proceedings of the National Academy of Sciences, Vol. 105, Issue 34
  • DOI: 10.1073/pnas.0802105105

Improved organic thin-film transistor performance using novel self-assembled monolayers
journal, February 2006

  • McDowell, M.; Hill, I. G.; McDermott, J. E.
  • Applied Physics Letters, Vol. 88, Issue 7
  • DOI: 10.1063/1.2173711

Top-Gate Organic Field-Effect Transistors with High Environmental and Operational Stability
journal, January 2011

  • Hwang, Do Kyung; Fuentes-Hernandez, Canek; Kim, Jungbae
  • Advanced Materials, Vol. 23, Issue 10
  • DOI: 10.1002/adma.201004278

Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition
journal, October 2016

  • Wang, Cheng-Yin; Fuentes-Hernandez, Canek; Yun, Minseong
  • ACS Applied Materials & Interfaces, Vol. 8, Issue 44
  • DOI: 10.1021/acsami.6b10603

High-Performance Polymer-Small Molecule Blend Organic Transistors
journal, March 2009

  • Hamilton, Richard; Smith, Jeremy; Ogier, Simon
  • Advanced Materials, Vol. 21, Issue 10-11, p. 1166-1171
  • DOI: 10.1002/adma.200801725

Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates
journal, February 2002

  • Sheraw, C. D.; Zhou, L.; Huang, J. R.
  • Applied Physics Letters, Vol. 80, Issue 6, p. 1088-1090
  • DOI: 10.1063/1.1448659

AC Bias-Temperature Stability of a-InGaZnO Thin-Film Transistors With Metal Source/Drain Recessed Electrodes
journal, March 2014

  • Yu, Eric Kai-Hsiang; Abe, Katsumi; Kumomi, Hideya
  • IEEE Transactions on Electron Devices, Vol. 61, Issue 3
  • DOI: 10.1109/TED.2014.2302411

Bias-stress stability of low-voltage p-channel and n-channel organic thin-film transistors on flexible plastic substrates
journal, November 2014


Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic
journal, September 2004

  • Nathan, A.; Kumar, A.; Sakariya, K.
  • IEEE Journal of Solid-State Circuits, Vol. 39, Issue 9, p. 1477-1486
  • DOI: 10.1109/JSSC.2004.829373

Stable Solution-Processed Molecular n -Channel Organic Field-Effect Transistors
journal, July 2012

  • Hwang, Do Kyung; Dasari, Raghunath R.; Fenoll, Mathieu
  • Advanced Materials, Vol. 24, Issue 32
  • DOI: 10.1002/adma.201201689

A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications
journal, June 2004

  • Someya, T.; Sekitani, T.; Iba, S.
  • Proceedings of the National Academy of Sciences, Vol. 101, Issue 27, p. 9966-9970
  • DOI: 10.1073/pnas.0401918101

Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors
journal, November 1998


Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors
journal, October 2007

  • Mathijssen, S. G. J.; Cölle, M.; Gomes, H.
  • Advanced Materials, Vol. 19, Issue 19
  • DOI: 10.1002/adma.200602798

Organic RFID transponder chip with data rate compatible with electronic product coding
journal, July 2010


Amorphous Oxide Semiconductor TFTs for Displays and Imaging
journal, November 2014

  • Nathan, Arokia; Lee, Sungsik; Jeon, Sanghun
  • Journal of Display Technology, Vol. 10, Issue 11
  • DOI: 10.1109/JDT.2013.2292580

Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates
journal, February 2015

  • Wang, Cheng-Yin; Fuentes-Hernandez, Canek; Liu, Jen-Chieh
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 8
  • DOI: 10.1021/am508723a

    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.