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Title: Conduction mechanisms, dynamics and stability in ReRAMs

Authors:
; ; ; ; ORCiD logo;
Publication Date:
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
OSTI Identifier:
1437759
Grant/Contract Number:  
2017YFA0207600; DUT17RC(3)020
Resource Type:
Journal Article: Published Article
Journal Name:
Microelectronic Engineering
Additional Journal Information:
Journal Name: Microelectronic Engineering Journal Volume: 187-188 Journal Issue: C; Journal ID: ISSN 0167-9317
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Wang, Chen, Wu, Huaqiang, Gao, Bin, Zhang, Teng, Yang, Yuchao, and Qian, He. Conduction mechanisms, dynamics and stability in ReRAMs. Netherlands: N. p., 2018. Web. doi:10.1016/j.mee.2017.11.003.
Wang, Chen, Wu, Huaqiang, Gao, Bin, Zhang, Teng, Yang, Yuchao, & Qian, He. Conduction mechanisms, dynamics and stability in ReRAMs. Netherlands. doi:10.1016/j.mee.2017.11.003.
Wang, Chen, Wu, Huaqiang, Gao, Bin, Zhang, Teng, Yang, Yuchao, and Qian, He. Thu . "Conduction mechanisms, dynamics and stability in ReRAMs". Netherlands. doi:10.1016/j.mee.2017.11.003.
@article{osti_1437759,
title = {Conduction mechanisms, dynamics and stability in ReRAMs},
author = {Wang, Chen and Wu, Huaqiang and Gao, Bin and Zhang, Teng and Yang, Yuchao and Qian, He},
abstractNote = {},
doi = {10.1016/j.mee.2017.11.003},
journal = {Microelectronic Engineering},
number = C,
volume = 187-188,
place = {Netherlands},
year = {Thu Feb 01 00:00:00 EST 2018},
month = {Thu Feb 01 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.mee.2017.11.003

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