Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films

Liu, Tao; Li, Yufan; Gu, Lei; Ding, Junjia; Chang, Houchen; Janantha, P. A. Praveen; Kalinikos, Boris; Novosad, Valentyn; Hoffmann, Axel; Wu, Ruqian; Chien, C. L.; Wu, Mingzhong

doi:10.1103/PhysRevLett.120.207206

Title: Nontrivial Nature and Penetration Depth of Topological Surface States in ${SmB}_{6}$ Thin Films

Journal Article · Fri May 18 00:00:00 EDT 2018 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.120.207206· OSTI ID:1466390

Liu, Tao ^[1]; Li, Yufan ^[2]; Gu, Lei ^[3]; Ding, Junjia ^[4]; Chang, Houchen ^[1]; Janantha, P. A. Praveen ^[1]; Kalinikos, Boris ^[5]; Novosad, Valentyn ^[4]; Hoffmann, Axel ^[4]; Wu, Ruqian ^[3]; Chien, C. L. ^[2]; Wu, Mingzhong ^[1]

Colorado State Univ., Fort Collins, CO (United States)
Johns Hopkins Univ., Baltimore, MD (United States)
Univ. of California, Irvine, CA (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)
Colorado State Univ., Fort Collins, CO (United States); St. Petersburg Electrotechnical Univ., St. Petersburg (Russia)

The nontrivial feature and penetration depth of the topological surface states (TSS) in SmB₆ were studied via spin pumping. The experiments used SmB₆ thin films grown on the bulk magnetic insulator Y₃Fe₅O₁₂ (YIG). Upon the excitation of magnetization precession in the YIG, a spin current is generated in the SmB₆ that produces, via spin--orbit coupling, a lateral electrical voltage in the film. This spin-pumping voltage signal becomes considerably stronger as the temperature decreases from 150 to 10 K, and such an enhancement most likely originates from the spin-momentum locking of the TSS and may thereby serve as evidence for the nontrivial nature of the TSS. The voltage data also show a unique film thickness dependence that suggests a TSS depth of ~32 nm. Finally, the spin--pumping results arc supported by transport measurements and analyses using a tight binding model.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Argonne National Laboratory (ANL), Argonne, IL (United States); Johns Hopkins Univ., Baltimore, MD (United States); Univ. of California, Riverside, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357; SC0009390; SC0012670

OSTI ID:: 1466390

Alternate ID(s):: OSTI ID: 1437688; OSTI ID: 1597379

Journal Information:: Physical Review Letters, Vol. 120, Issue 20; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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