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Title: Three-dimensional crossbar arrays of self-rectifying Si/SiO 2/Si memristors

Abstract

Memristors are promising building blocks for the next generation memory, unconventional computing systems and beyond. Currently common materials used to build memristors are not necessarily compatible with the silicon dominant complementary metal-oxide-semiconductor (CMOS) technology. Furthermore, external selector devices or circuits are usually required in order for large memristor arrays to function properly, resulting in increased circuit complexity. Here we demonstrate fully CMOS-compatible, all-silicon based and self-rectifying memristors that negate the need for external selectors in large arrays. It consists of p- and n-type doped single crystalline silicon electrodes and a thin chemically produced silicon oxide switching layer. The device exhibits repeatable resistance switching behavior with high rectifying ratio (10 5), high ON/OFF conductance ratio (10 4) and attractive retention at 300 °C. We further build a 5-layer 3-dimensional (3D) crossbar array of 100 nm memristors by stacking fluid supported silicon membranes. The CMOS compatibility and self-rectifying behavior open up opportunities for mass production of memristor arrays and 3D hybrid circuits on full-wafer scale silicon and flexible substrates without increasing circuit complexity.

Authors:
ORCiD logo [1];  [2];  [1]; ORCiD logo [1];  [1];  [3];  [3];  [1]; ORCiD logo [4];  [1]
  1. Univ. of Massachusetts, Amherst, MA (United States)
  2. Univ. of Massachusetts, Amherst, MA (United States); Brookhaven National Lab. (BNL), Upton, NY (United States); Tianjin Univ. of Technology, Tianjin (China)
  3. Air Force Research Lab., Rome, NY (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1437443
Report Number(s):
BNL-204647-2018-JAAM
Journal ID: ISSN 2041-1723
Grant/Contract Number:  
SC0012704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Memristors; Electrical and electronic engineering; Electronic devices

Citation Formats

Li, Can, Han, Lili, Jiang, Hao, Jang, Moon -Hyung, Lin, Peng, Wu, Qing, Barnell, Mark, Yang, J. Joshua, Xin, Huolin L., and Xia, Qiangfei. Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors. United States: N. p., 2017. Web. doi:10.1038/ncomms15666.
Li, Can, Han, Lili, Jiang, Hao, Jang, Moon -Hyung, Lin, Peng, Wu, Qing, Barnell, Mark, Yang, J. Joshua, Xin, Huolin L., & Xia, Qiangfei. Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors. United States. doi:10.1038/ncomms15666.
Li, Can, Han, Lili, Jiang, Hao, Jang, Moon -Hyung, Lin, Peng, Wu, Qing, Barnell, Mark, Yang, J. Joshua, Xin, Huolin L., and Xia, Qiangfei. Mon . "Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors". United States. doi:10.1038/ncomms15666. https://www.osti.gov/servlets/purl/1437443.
@article{osti_1437443,
title = {Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors},
author = {Li, Can and Han, Lili and Jiang, Hao and Jang, Moon -Hyung and Lin, Peng and Wu, Qing and Barnell, Mark and Yang, J. Joshua and Xin, Huolin L. and Xia, Qiangfei},
abstractNote = {Memristors are promising building blocks for the next generation memory, unconventional computing systems and beyond. Currently common materials used to build memristors are not necessarily compatible with the silicon dominant complementary metal-oxide-semiconductor (CMOS) technology. Furthermore, external selector devices or circuits are usually required in order for large memristor arrays to function properly, resulting in increased circuit complexity. Here we demonstrate fully CMOS-compatible, all-silicon based and self-rectifying memristors that negate the need for external selectors in large arrays. It consists of p- and n-type doped single crystalline silicon electrodes and a thin chemically produced silicon oxide switching layer. The device exhibits repeatable resistance switching behavior with high rectifying ratio (105), high ON/OFF conductance ratio (104) and attractive retention at 300 °C. We further build a 5-layer 3-dimensional (3D) crossbar array of 100 nm memristors by stacking fluid supported silicon membranes. The CMOS compatibility and self-rectifying behavior open up opportunities for mass production of memristor arrays and 3D hybrid circuits on full-wafer scale silicon and flexible substrates without increasing circuit complexity.},
doi = {10.1038/ncomms15666},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {Mon Jun 05 00:00:00 EDT 2017},
month = {Mon Jun 05 00:00:00 EDT 2017}
}

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Works referenced in this record:

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
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Memristive devices for computing
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