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Title: The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon

Authors:
ORCiD logo [1];  [1];  [1];  [1]
  1. Université Grenoble Alpes, F-38000 Grenoble France, CEA, LETI, MINATEC Campus, F-38054 Grenoble France
Publication Date:
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
OSTI Identifier:
1437066
Grant/Contract Number:
ENIAC-2012-2/1/2013; ENIAC-2012-2/2/2013
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Volume: 255; Journal Issue: 5; Related Information: CHORUS Timestamp: 2018-05-18 06:21:34; Journal ID: ISSN 0370-1972
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Charles, Matthew, Baines, Yannick, Bouis, Renan, and Papon, Anne-Marie. The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon. Germany: N. p., 2018. Web. doi:10.1002/pssb.201700406.
Charles, Matthew, Baines, Yannick, Bouis, Renan, & Papon, Anne-Marie. The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon. Germany. doi:10.1002/pssb.201700406.
Charles, Matthew, Baines, Yannick, Bouis, Renan, and Papon, Anne-Marie. Fri . "The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon". Germany. doi:10.1002/pssb.201700406.
@article{osti_1437066,
title = {The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon},
author = {Charles, Matthew and Baines, Yannick and Bouis, Renan and Papon, Anne-Marie},
abstractNote = {},
doi = {10.1002/pssb.201700406},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = 5,
volume = 255,
place = {Germany},
year = {Fri Jan 12 00:00:00 EST 2018},
month = {Fri Jan 12 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on January 12, 2019
Publisher's Accepted Manuscript

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