Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit

Yuan, Hongtao; Liu, Zhongkai; Xu, Gang; Zhou, Bo; Wu, Sanfeng; Dumcenco, Dumitru; Yan, Kai; Zhang, Yi; Mo, Sung-Kwan; Dudin, Pavel; Kandyba, Victor; Yablonskikh, Mikhail; Barinov, Alexei; Shen, Zhixun; Zhang, Shoucheng; Huang, Yingsheng; Xu, Xiaodong; Hussain, Zahid; Hwang, Harold Y.; Cui, Yi; Chen, Yulin

doi:10.1021/acs.nanolett.5b05107

Title: Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit

Journal Article · Tue Jul 12 00:00:00 EDT 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.5b05107· OSTI ID:1436991

Yuan, Hongtao ^[1]; Liu, Zhongkai ^[2]; Xu, Gang ^[3]; Zhou, Bo ^[4]; Wu, Sanfeng ^[5]; Dumcenco, Dumitru ^[6]; Yan, Kai ^[1]; Zhang, Yi ^[7]; Mo, Sung-Kwan ^[7]; Dudin, Pavel ^[8]; Kandyba, Victor ^[9]; Yablonskikh, Mikhail ^[9]; Barinov, Alexei ^[9]; Shen, Zhixun ^[1]; Zhang, Shoucheng ^[1]; Huang, Yingsheng ^[10]; Xu, Xiaodong ^[5]; Hussain, Zahid ^[7]; Hwang, Harold Y. ^[1]; Cui, Yi ^[11] more »

Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States); ShanghaiTech Univ. (China); CAS-Shanghai Science Research Center (China)
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
Univ. of Oxford (United Kingdom); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Univ. of Washington, Seattle, WA (United States)
National Taiwan Univ. of Science and Technology, Taipei (Taiwan); Ecole Polytechnique Federale Lausanne (Switzlerland)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Science and Technology Facilities Council (STFC), Harwell Campus, Oxford (United Kingdom). Diamond Light Source, Ltd.
Elettra-Sincrotrone Trieste ScPA, Trieste (Italy)
National Taiwan Univ. of Science and Technology, Taipei (Taiwan)
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States)
ShanghaiTech Univ. (China); CAS-Shanghai Research Center (China); Univ. of Oxford (United Kingdom); Science and Technology Facilities Council (STFC), Harwell Campus, Oxford (United Kingdom). Diamond Light Source, Ltd.

Valley physics based on layered transition metal chalcogenides have recently sparked much interest due to their potential spintronics and valleytronics applications. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS₂ remains controversial. Here, using angle-resolved photoemission spectroscopy with sub-micron spatial resolution (micro- ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS₂, WS₂ and WSe₂, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1436991

Journal Information:: Nano Letters, Vol. 16, Issue 8; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 61 works

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