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Title: Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit

Abstract

Valley physics based on layered transition metal chalcogenides have recently sparked much interest due to their potential spintronics and valleytronics applications. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS 2 remains controversial. Here, using angle-resolved photoemission spectroscopy with sub-micron spatial resolution (micro- ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS 2, WS 2 and WSe 2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [1];  [7];  [7];  [8];  [9];  [9];  [9];  [1];  [1];  [10];  [5];  [7];  [1];  [11] more »;  [12] « less
  1. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States)
  2. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States); ShanghaiTech Univ. (China); CAS-Shanghai Science Research Center (China)
  3. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
  4. Univ. of Oxford (United Kingdom); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  5. Univ. of Washington, Seattle, WA (United States)
  6. National Taiwan Univ. of Science and Technology, Taipei (Taiwan); Ecole Polytechnique Federale Lausanne (Switzlerland)
  7. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  8. Science and Technology Facilities Council (STFC), Harwell Campus, Oxford (United Kingdom). Diamond Light Source, Ltd.
  9. Elettra-Sincrotrone Trieste ScPA, Trieste (Italy)
  10. National Taiwan Univ. of Science and Technology, Taipei (Taiwan)
  11. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States)
  12. ShanghaiTech Univ. (China); CAS-Shanghai Research Center (China); Univ. of Oxford (United Kingdom); Science and Technology Facilities Council (STFC), Harwell Campus, Oxford (United Kingdom). Diamond Light Source, Ltd.
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1436991
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 16; Journal Issue: 8; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yuan, Hongtao, Liu, Zhongkai, Xu, Gang, Zhou, Bo, Wu, Sanfeng, Dumcenco, Dumitru, Yan, Kai, Zhang, Yi, Mo, Sung-Kwan, Dudin, Pavel, Kandyba, Victor, Yablonskikh, Mikhail, Barinov, Alexei, Shen, Zhixun, Zhang, Shoucheng, Huang, Yingsheng, Xu, Xiaodong, Hussain, Zahid, Hwang, Harold Y., Cui, Yi, and Chen, Yulin. Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit. United States: N. p., 2016. Web. doi:10.1021/acs.nanolett.5b05107.
Yuan, Hongtao, Liu, Zhongkai, Xu, Gang, Zhou, Bo, Wu, Sanfeng, Dumcenco, Dumitru, Yan, Kai, Zhang, Yi, Mo, Sung-Kwan, Dudin, Pavel, Kandyba, Victor, Yablonskikh, Mikhail, Barinov, Alexei, Shen, Zhixun, Zhang, Shoucheng, Huang, Yingsheng, Xu, Xiaodong, Hussain, Zahid, Hwang, Harold Y., Cui, Yi, & Chen, Yulin. Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit. United States. doi:10.1021/acs.nanolett.5b05107.
Yuan, Hongtao, Liu, Zhongkai, Xu, Gang, Zhou, Bo, Wu, Sanfeng, Dumcenco, Dumitru, Yan, Kai, Zhang, Yi, Mo, Sung-Kwan, Dudin, Pavel, Kandyba, Victor, Yablonskikh, Mikhail, Barinov, Alexei, Shen, Zhixun, Zhang, Shoucheng, Huang, Yingsheng, Xu, Xiaodong, Hussain, Zahid, Hwang, Harold Y., Cui, Yi, and Chen, Yulin. Tue . "Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit". United States. doi:10.1021/acs.nanolett.5b05107. https://www.osti.gov/servlets/purl/1436991.
@article{osti_1436991,
title = {Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit},
author = {Yuan, Hongtao and Liu, Zhongkai and Xu, Gang and Zhou, Bo and Wu, Sanfeng and Dumcenco, Dumitru and Yan, Kai and Zhang, Yi and Mo, Sung-Kwan and Dudin, Pavel and Kandyba, Victor and Yablonskikh, Mikhail and Barinov, Alexei and Shen, Zhixun and Zhang, Shoucheng and Huang, Yingsheng and Xu, Xiaodong and Hussain, Zahid and Hwang, Harold Y. and Cui, Yi and Chen, Yulin},
abstractNote = {Valley physics based on layered transition metal chalcogenides have recently sparked much interest due to their potential spintronics and valleytronics applications. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with sub-micron spatial resolution (micro- ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2 and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.},
doi = {10.1021/acs.nanolett.5b05107},
journal = {Nano Letters},
issn = {1530-6984},
number = 8,
volume = 16,
place = {United States},
year = {2016},
month = {7}
}

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