The influence of point defects on the thermal conductivity of AlN crystals

Rounds, Robert; Sarkar, Biplab; Alden, Dorian; Guo, Qiang; Klump, Andrew; Hartmann, Carsten; Nagashima, Toru; Kirste, Ronny; Franke, Alexander; Bickermann, Matthias; Kumagai, Yoshinao; Sitar, Zlatko; Collazo, Ramón

doi:10.1063/1.5028141

Title: The influence of point defects on the thermal conductivity of AlN crystals

Journal Article · Mon May 14 00:00:00 EDT 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5028141· OSTI ID:1511154

Rounds, Robert ^[1];

^[1];

^[1]; Guo, Qiang ^[1]; Klump, Andrew ^[1];

^[2]; Nagashima, Toru ^[3]; Kirste, Ronny ^[4]; Franke, Alexander ^[1];

^[2]; Kumagai, Yoshinao ^[5]; Sitar, Zlatko ^[4]; Collazo, Ramón ^[1]

North Carolina State Univ., Raleigh, NC (United States)
Leibniz Institute for Crystal Growth (IKZ), Berlin (Germany)
Tokuyama Corporation, Tsukuba (Japan)
North Carolina State Univ., Raleigh, NC (United States); Adroit Materials, Inc., Cary, NC (United States)
Tokyo University of Agriculture and Technology, Koganei (Japan)

Here, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations is analyzed using the 3ω method in the temperature range of 30–325K. AlN wafers grown by physical vapor transport show significant variation in thermal conductivity at room temperature with values ranging between 268W/m K and 339W/m K. AlN crystals grown by hydride vapor phase epitaxy yield values between 298W/m K and 341W/m K at room temperature, suggesting that the same fundamental mechanisms limit the thermal conductivity of AlN grown by both techniques. All samples in this work show phonon resonance behavior resulting from incorporated point defects. Samples shown by optical analysis to contain carbon-silicon complexes exhibit higher thermal conductivity above 100K. Lastly, phonon scattering by point defects is determined to be the main limiting factor for thermal conductivity of AlN within the investigated temperature range.

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Research Organization:: Adroit Materials, Inc., Cary, NC (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0011883

OSTI ID:: 1511154

Alternate ID(s):: OSTI ID: 1436905

Journal Information:: Journal of Applied Physics, Vol. 123, Issue 18; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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