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Title: Possible origin of nonlinear conductivity and large dielectric constant in the commensurate charge-density-wave phase of 1 T - TaS 2

Journal Article · · Physical Review B
 [1];  [2];  [3];  [4];  [4]
  1. Tianjin Univ. of Technology, Tianjin (China). School of Materials Science and Engineering; Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Tianjin Univ. of Technology, Tianjin (China). Key Lab. of Display Materials and Photoelectric Devices
  2. Tianjin Univ. of Technology, Tianjin (China). School of Materials Science and Engineering
  3. Tianjin Univ. of Technology, Tianjin (China). School of Materials Science and Engineering; Tianjin Key Lab. for Photoelectric Materials and Devices, Tianjin (China)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.

The electric field dependence of the dielectric properties and the nonlinear conductance of 1T-TaS2 below 50 K has been investigated. A large dielectric constant of about 104 is obtained up to 107 Hz, which cannot be attributed to hopping of the localized carriers alone, the collective excitations of the commensurate charge-density-wave must be another contributor. The dielectric spectra disperse slightly in our measured temperature and frequency range. At a moderate dc bias field, the real part of the dielectric constant ε1(ω) decreases. Lastly, we propose that the separation of bound soliton-antisoliton pairs may be a contributor to the reduction of ε1(ω) and the accompanying nonlinear conductivity with increasing dc bias.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation of China
Grant/Contract Number:
SC0012704
OSTI ID:
1457352
Alternate ID(s):
OSTI ID: 1436825
Report Number(s):
BNL-205801-2018-JAAM; PRBMDO; TRN: US1901365
Journal Information:
Physical Review B, Vol. 97, Issue 19; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 10 works
Citation information provided by
Web of Science

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Configurational electronic states in layered transition metal dichalcogenides journal August 2019

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