Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

doi:10.1063/1.5024418

Title: Atomically engineered epitaxial anatase TiO₂ metal-semiconductor field-effect transistors

Journal Article · Mon Mar 26 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5024418· OSTI ID:1436470

Kim, Brian S. Y. ^[1]; Minohara, Makoto ^[2]; Hikita, Yasuyuki ^[3]; Bell, Christopher ^[4]; Hwang, Harold Y. ^[5]

Stanford Univ., Stanford, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States); High Energy Accelerator Research Organization (KEK), Ibaraki (Japan)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Bristol, Bristol (United Kingdom)
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Here, anatase TiO₂ is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO₂ and LaAlO₃ (001), which arises for LaO-terminated LaAlO₃, while the AlO_2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ_FE of 3.14 cm² (V s)^–1 approaching 98% of the corresponding Hall mobility μ_Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1436470

Journal Information:: Applied Physics Letters, Vol. 112, Issue 13; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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References (34)

Ta-doped Anatase TiO ₂ Epitaxial Film as Transparent Conducting Oxide Hitosugi, Taro; Furubayashi, Yutaka; Ueda, Atsuki Japanese Journal of Applied Physics, Vol. 44, Issue No. 34 https://doi.org/10.1143/JJAP.44.L1063	journal	August 2005
Photoelectrochemical cells Grätzel, Michael Nature, Vol. 414, Issue 6861 https://doi.org/10.1038/35104607	journal	November 2001
Superhydrophobic TiO ₂ Surfaces: Preparation, Photocatalytic Wettability Conversion, and Superhydrophobic−Superhydrophilic Patterning Zhang, Xintong; Jin, Min; Liu, Zhaoyue The Journal of Physical Chemistry C, Vol. 111, Issue 39 https://doi.org/10.1021/jp0744432	journal	October 2007
Raman Spectra of Ti $O_{2}$ , Mg $F_{2}$ , Zn $F_{2}$ , Fe $F_{2}$ , and Mn $F_{2}$ Porto, S. P. S.; Fleury, P. A.; Damen, T. C. Physical Review, Vol. 154, Issue 2 https://doi.org/10.1103/PhysRev.154.522	journal	February 1967
Electrochemical Photolysis of Water at a Semiconductor Electrode Fujishima, Akira; Honda, Kenichi Nature, Vol. 238, Issue 5358, p. 37-38 https://doi.org/10.1038/238037a0	journal	July 1972
Electrical and optical properties of TiO ₂ anatase thin films Tang, H.; Prasad, K.; Sanjinès, R. Journal of Applied Physics, Vol. 75, Issue 4 https://doi.org/10.1063/1.356306	journal	February 1994
Band alignment of rutile and anatase TiO2 Scanlon, David O.; Dunnill, Charles W.; Buckeridge, John Nature Materials, Vol. 12, Issue 9 https://doi.org/10.1038/nmat3697	journal	July 2013
GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel Fortuna, S. A. IEEE Electron Device Letters, Vol. 30, Issue 6 https://doi.org/10.1109/LED.2009.2019769	journal	June 2009
Comparison Studies of Interfacial Electronic and Energetic Properties of LaAlO ₃ /TiO ₂ and TiO ₂ /LaAlO ₃ Heterostructures from First-Principles Calculations Cheng, Jianli; Luo, Jian; Yang, Kesong ACS Applied Materials & Interfaces, Vol. 9, Issue 8 https://doi.org/10.1021/acsami.6b12254	journal	February 2017
Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxy Murakami, M.; Matsumoto, Y.; Nakajima, K. Applied Physics Letters, Vol. 78, Issue 18 https://doi.org/10.1063/1.1365412	journal	April 2001
Metal-to-insulator transition in anatase TiO ₂ thin films induced by growth rate modulation Tachikawa, T.; Minohara, M.; Nakanishi, Y. Applied Physics Letters, Vol. 101, Issue 2 https://doi.org/10.1063/1.4733724	journal	July 2012
A heteroepitaxial perovskite metal-base transistor Yajima, Takeaki; Hikita, Yasuyuki; Hwang, Harold Y. Nature Materials, Vol. 10, Issue 3 https://doi.org/10.1038/nmat2946	journal	January 2011
A transparent metal: Nb-doped anatase TiO2 Furubayashi, Yutaka; Hitosugi, Taro; Yamamoto, Yukio Applied Physics Letters, Vol. 86, Issue 25 https://doi.org/10.1063/1.1949728	journal	June 2005
Titanium Dioxide Nanomaterials for Sensor Applications Bai, Jing; Zhou, Baoxue Chemical Reviews, Vol. 114, Issue 19 https://doi.org/10.1021/cr400625j	journal	May 2014
Electron mobilities in modulation‐doped semiconductor heterojunction superlattices Dingle, R.; Störmer, H. L.; Gossard, A. C. Applied Physics Letters, Vol. 33, Issue 7 https://doi.org/10.1063/1.90457	journal	October 1978
Epitaxial insulator for bottom-gate field-effect devices based on TiO2 Katayama, Masao; Koinuma, Hideomi; Matsumoto, Yuji Materials Science and Engineering: B, Vol. 148, Issue 1-3 https://doi.org/10.1016/j.mseb.2007.09.050	journal	February 2008
ZnO Nanorod Logic Circuits Park, W. I.; Kim, J. S.; Yi, G. -C. Advanced Materials, Vol. 17, Issue 11 https://doi.org/10.1002/adma.200401732	journal	June 2005
Comparison of the Photoelectronic and Photocatalytic Activities of Various Anatase and Rutile Forms of Titania in Pure Liquid Organic Phases and in Aqueous Solutions Sclafani, A.; Herrmann, J. M. The Journal of Physical Chemistry, Vol. 100, Issue 32 https://doi.org/10.1021/jp9533584	journal	January 1996
Review of the anatase to rutile phase transformation Hanaor, Dorian A. H.; Sorrell, Charles C. Journal of Materials Science, Vol. 46, Issue 4 https://doi.org/10.1007/s10853-010-5113-0	journal	December 2010
Hall Effect in the Accumulation Layers on the Surface of Organic Semiconductors Podzorov, V.; Menard, E.; Rogers, J. A. Physical Review Letters, Vol. 95, Issue 22, Article No. 226601 https://doi.org/10.1103/PhysRevLett.95.226601	journal	November 2005
Study on a Detector for Gaseous Components Using Semiconductive Thin Films. Seiyama, Tetsuro.; Kagawa, Shuichi. Analytical Chemistry, Vol. 38, Issue 8 https://doi.org/10.1021/ac60240a031	journal	July 1966
Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide Matsumoto, Y. Science, Vol. 291, Issue 5505 https://doi.org/10.1126/science.1056186	journal	January 2001
Mobility Modulation of the Two-Dimensional Electron Gas Via Controlled Deformation of the Electron Wave Function in Selectively Doped AlGaAs-GaAs Heterojunctions Hirakawa, K.; Sakaki, H.; Yoshino, J. Physical Review Letters, Vol. 54, Issue 12 https://doi.org/10.1103/PhysRevLett.54.1279	journal	March 1985
Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide Yamada, Y.; Ueno, K.; Fukumura, T. Science, Vol. 332, Issue 6033 https://doi.org/10.1126/science.1202152	journal	May 2011
Anatase TiO2 single crystals with a large percentage of reactive facets Yang, Hua Gui; Sun, Cheng Hua; Qiao, Shi Zhang Nature, Vol. 453, Issue 7195 https://doi.org/10.1038/nature06964	journal	May 2008
Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors Cui, Shumao; Pu, Haihui; Wells, Spencer A. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9632	journal	October 2015
A study on a palladium-titanium oxide Schottky diode as a detector for gaseous components Yamamoto, N.; Tonomura, S.; Matsuoka, T. Surface Science, Vol. 92, Issue 2-3 https://doi.org/10.1016/0039-6028(80)90212-5	journal	February 1980
High quality anatase TiO2 film: Field-effect transistor based on anatase TiO2 Katayama, Masao; Ikesaka, Shinya; Kuwano, Jun Applied Physics Letters, Vol. 92, Issue 13 https://doi.org/10.1063/1.2906361	journal	March 2008
Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation Nagao, Yuki; Yoshikawa, Akira; Koumoto, Kunihito Applied Physics Letters, Vol. 97, Issue 17 https://doi.org/10.1063/1.3507898	journal	October 2010
Light-induced amphiphilic surfaces Wang, Rong; Hashimoto, Kazuhito; Fujishima, Akira Nature, Vol. 388, Issue 6641 https://doi.org/10.1038/41233	journal	July 1997
Domain formation in anatase TiO ₂ thin films on LaAlO ₃ substrates Zheng, Shijian; Fisher, Craig A. J.; Kato, Takeharu Applied Physics Letters, Vol. 101, Issue 19 https://doi.org/10.1063/1.4766338	journal	November 2012
Spectroscopic, Photoconductivity, and Photocatalytic Studies of TiO2 Colloids: Naked and with the Lattice Doped with Cr3+, Fe3+, and V5+ Cations Serpone, Nick; Lawless, Darren; Disdier, Jean Langmuir, Vol. 10, Issue 3 https://doi.org/10.1021/la00015a010	journal	March 1994
Raman spectrum of anatase, TiO2 Ohsaka, Toshiaki; Izumi, Fujio; Fujiki, Yoshinori Journal of Raman Spectroscopy, Vol. 7, Issue 6 https://doi.org/10.1002/jrs.1250070606	journal	December 1978
Atomically Engineered Metal–Insulator Transition at the TiO ₂ /LaAlO ₃ Heterointerface Minohara, Makoto; Tachikawa, Takashi; Nakanishi, Yasuo Nano Letters, Vol. 14, Issue 11 https://doi.org/10.1021/nl5039192	journal	October 2014

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