Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns

Chang, Tzu-Hsuan; Xiong, Shisheng; Jacobberger, Robert M.; Mikael, Solomon; Suh, Hyo Seon; Liu, Chi-Chun; Geng, Dalong; Wang, Xudong; Arnold, Michael S.; Ma, Zhenqiang; Nealey, Paul F.

doi:10.1038/srep31407

Title: Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns

Journal Article · Tue Aug 16 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep31407· OSTI ID:1436420

Chang, Tzu-Hsuan ^[1]; Xiong, Shisheng ^[2]; Jacobberger, Robert M. ^[3]; Mikael, Solomon ^[1]; Suh, Hyo Seon ^[2]; Liu, Chi-Chun ^[4]; Geng, Dalong ^[3]; Wang, Xudong ^[3]; Arnold, Michael S. ^[3]; Ma, Zhenqiang ^[1]; Nealey, Paul F. ^[2]

Univ. of Wisconsin, Madison, WI (United States). Dept. of Electrical and Computer Engineering
Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
Univ. of Chicago, IL (United States). Inst. for Molecular Engineering; IBM Albany NanoTech, Albany, NY (United States)

Directed self-assembly of block copolymers is a scalable method to fabricate well-ordered patterns over the wafer scale with feature sizes below the resolution of conventional lithography. Typically, lithographically-defined prepatterns with varying chemical contrast are used to rationally guide the assembly of block copolymers. The directed self-assembly to obtain accurate registration and alignment is largely influenced by the assembly kinetics. Furthermore, a considerably broad processing window is favored for industrial manufacturing. Using an atomically-thin layer of graphene on germanium, after two simple processing steps, we create a novel chemical pattern to direct the assembly of polystyreneblock-poly(methyl methacrylate). Faster assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemical patterns based on polymer mats and brushes. This new chemical pattern allows for assembly on a wide range of guiding periods and along designed 90° bending structures. We also achieve density multiplication by a factor of 10, greatly enhancing the pattern resolution. Lastly, the rapid assembly kinetics, minimal topography, and broad processing window demonstrate the advantages of inorganic chemical patterns composed of hard surfaces.

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Research Organization:: Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOD; US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: SC0006414

OSTI ID:: 1436420

Journal Information:: Scientific Reports, Vol. 6, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 20 works

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