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Title: The Determination of Radiation Hardness of Semiconductor Materials and Devices with Ion Beams

Abstract

lon accelerator based techniques provide unique tools to gain insight into the phenomena underlying the formation of defects induced by energetic particles in semiconductor materials and their effects on the electronic features of the device. In recognition of the potential of these techniques, with the aim of enhancing the understanding of the mechanisms underlying the degradation of the performances of semiconductor devices induced by ionizing radiation, the IAEA established a Research Project, coordinated by the Physics Section (CRP F11016) entitled "Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators" at the end of 2011. The objective of this IAEA Coordinated Research Project (CRP) was to enhance the capabilities of the interested Member States by facilitating their collective efforts to use accelerator-based ion irradiation of electronic materials in conjunction with available advanced characterization techniques to gain a deeper understanding of how different types of radiation influences the electronic properties of materials and devices, leading to an improved radiation hardness. A dynamic and productive research was stimulated by this CRP among collaborating partners, resulting in publications in scientific journals [CRP2016], educational and scientific software packages [W8, Forneris2014], and a number of collaborations among the participatingmore » research groups. Two of the most significant outcomes of this project are i) the experimental protocol, which rationalizes the use of the many existing characterization techniques adopted to investigate radiation effects in semiconductor devices and ii) the relevant theoretical approach to interpret the experimental data [Vittone2016 and references therein]. This publication integrates output of research articles published by the partners of the CRP and is aimed to provide an exhaustive description of the experimental protocol, the theoretical model with the relevant limits of application, the data analysis procedure, and the physical observables which can be effectively measured and which can be used for assessment of the radiation hardness of semiconductor devices. The intended audience of this report includes all those professionals and technologists working in ion beam functional analysis of semiconductor materials, solid-state physicists and engineers involved in the design of electronic devices working in radiation harsh environments.« less

Authors:
 [1];  [1];  [2];  [3];  [3];  [3];  [4];  [4];  [5]
  1. Australian Nuclear Science and Technology Organisation (ANSTO), Lucas Heights, NSW (Australia). Centre for Accelerator Science
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Dept. of Ion-Solid Interactions
  3. Ruder Boskovic Inst. (IRB), Zagreb, Croatia
  4. Univ. of Seville (Spain). National Accelerator Center (CNA)
  5. Univ. of Turin (Italy). Dept. of Physics
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1436059
Report Number(s):
SAND2018-4338R
662672
DOE Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Pastuovic, Zeljko, Siegele, Rainer, Vizkelethy, Gyorgy, Jaksic, Milko, Grilj, Veljko, Skukan, Natko, Garcia Lopez, Javier, Jimenez Ramos, Carmen, and Vittone, Ettore. The Determination of Radiation Hardness of Semiconductor Materials and Devices with Ion Beams. United States: N. p., 2017. Web. doi:10.2172/1436059.
Pastuovic, Zeljko, Siegele, Rainer, Vizkelethy, Gyorgy, Jaksic, Milko, Grilj, Veljko, Skukan, Natko, Garcia Lopez, Javier, Jimenez Ramos, Carmen, & Vittone, Ettore. The Determination of Radiation Hardness of Semiconductor Materials and Devices with Ion Beams. United States. doi:10.2172/1436059.
Pastuovic, Zeljko, Siegele, Rainer, Vizkelethy, Gyorgy, Jaksic, Milko, Grilj, Veljko, Skukan, Natko, Garcia Lopez, Javier, Jimenez Ramos, Carmen, and Vittone, Ettore. Fri . "The Determination of Radiation Hardness of Semiconductor Materials and Devices with Ion Beams". United States. doi:10.2172/1436059. https://www.osti.gov/servlets/purl/1436059.
@article{osti_1436059,
title = {The Determination of Radiation Hardness of Semiconductor Materials and Devices with Ion Beams},
author = {Pastuovic, Zeljko and Siegele, Rainer and Vizkelethy, Gyorgy and Jaksic, Milko and Grilj, Veljko and Skukan, Natko and Garcia Lopez, Javier and Jimenez Ramos, Carmen and Vittone, Ettore},
abstractNote = {lon accelerator based techniques provide unique tools to gain insight into the phenomena underlying the formation of defects induced by energetic particles in semiconductor materials and their effects on the electronic features of the device. In recognition of the potential of these techniques, with the aim of enhancing the understanding of the mechanisms underlying the degradation of the performances of semiconductor devices induced by ionizing radiation, the IAEA established a Research Project, coordinated by the Physics Section (CRP F11016) entitled "Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators" at the end of 2011. The objective of this IAEA Coordinated Research Project (CRP) was to enhance the capabilities of the interested Member States by facilitating their collective efforts to use accelerator-based ion irradiation of electronic materials in conjunction with available advanced characterization techniques to gain a deeper understanding of how different types of radiation influences the electronic properties of materials and devices, leading to an improved radiation hardness. A dynamic and productive research was stimulated by this CRP among collaborating partners, resulting in publications in scientific journals [CRP2016], educational and scientific software packages [W8, Forneris2014], and a number of collaborations among the participating research groups. Two of the most significant outcomes of this project are i) the experimental protocol, which rationalizes the use of the many existing characterization techniques adopted to investigate radiation effects in semiconductor devices and ii) the relevant theoretical approach to interpret the experimental data [Vittone2016 and references therein]. This publication integrates output of research articles published by the partners of the CRP and is aimed to provide an exhaustive description of the experimental protocol, the theoretical model with the relevant limits of application, the data analysis procedure, and the physical observables which can be effectively measured and which can be used for assessment of the radiation hardness of semiconductor devices. The intended audience of this report includes all those professionals and technologists working in ion beam functional analysis of semiconductor materials, solid-state physicists and engineers involved in the design of electronic devices working in radiation harsh environments.},
doi = {10.2172/1436059},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Aug 04 00:00:00 EDT 2017},
month = {Fri Aug 04 00:00:00 EDT 2017}
}

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