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Title: Spontaneous Hall effects in the electron system at the SmTiO 3 /EuTiO 3 interface

Authors:
 [1];  [1];  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106-5050, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1435990
Grant/Contract Number:
DEFG02-02ER45994
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 5; Related Information: CHORUS Timestamp: 2018-05-04 10:00:43; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Ahadi, Kaveh, Kim, Honggyu, and Stemmer, Susanne. Spontaneous Hall effects in the electron system at the SmTiO 3 /EuTiO 3 interface. United States: N. p., 2018. Web. doi:10.1063/1.5025169.
Ahadi, Kaveh, Kim, Honggyu, & Stemmer, Susanne. Spontaneous Hall effects in the electron system at the SmTiO 3 /EuTiO 3 interface. United States. doi:10.1063/1.5025169.
Ahadi, Kaveh, Kim, Honggyu, and Stemmer, Susanne. Tue . "Spontaneous Hall effects in the electron system at the SmTiO 3 /EuTiO 3 interface". United States. doi:10.1063/1.5025169.
@article{osti_1435990,
title = {Spontaneous Hall effects in the electron system at the SmTiO 3 /EuTiO 3 interface},
author = {Ahadi, Kaveh and Kim, Honggyu and Stemmer, Susanne},
abstractNote = {},
doi = {10.1063/1.5025169},
journal = {APL Materials},
number = 5,
volume = 6,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2018},
month = {Tue May 01 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.5025169

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