Large-area, low-voltage, GaN-based avalanche photodiode arrays for application in harsh environments
- Lightwave Photonics, Inc., St. Paul, MN (United States)
In this program, Lightwave Photonics, Inc. (LPI), in collaboration with the University of Central Florida, worked to develop a robust, high-performance GaN-based APD arrays on novel lattice-matched metallic substrates for high sensitivity UV light detection. LPI has previously developed and patented epitaxial structures that combine high-quality III-nitride and metal-nitride layers for high performance devices on Si and sapphire substrates. In this project, LPI employed this technology to both grow high-quality APD structures and to allow a low-cost and reliable flip chip packaging (n-type GaN on top), and substrate separation by wet chemical etching, instead of the more problematic laser liftoff. This will eliminate the need for ultra-low defect (e.g., threading dislocation density, TDD < 1E7 cm-2), allows lower resistance, uniform p-contact on the bottom with better optical reflectivity, thinner top n-contact with less absorption, and overall reduced fabrication cost.
- Research Organization:
- Lightwave Photonics, Inc., St. Paul, MN (United States)
- Sponsoring Organization:
- USDOE Office of Science and Technology (ST)
- Contributing Organization:
- Lightwave Photonics, Inc., University of Central Florida
- DOE Contract Number:
- SC0017681
- OSTI ID:
- 1435957
- Type / Phase:
- SBIR (Phase I)
- Report Number(s):
- SC0017681
- Country of Publication:
- United States
- Language:
- English
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