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Title: Large-area, low-voltage, GaN-based avalanche photodiode arrays for application in harsh environments

Abstract

In this program, Lightwave Photonics, Inc. (LPI), in collaboration with the University of Central Florida, worked to develop a robust, high-performance GaN-based APD arrays on novel lattice-matched metallic substrates for high sensitivity UV light detection. LPI has previously developed and patented epitaxial structures that combine high-quality III-nitride and metal-nitride layers for high performance devices on Si and sapphire substrates. In this project, LPI employed this technology to both grow high-quality APD structures and to allow a low-cost and reliable flip chip packaging (n-type GaN on top), and substrate separation by wet chemical etching, instead of the more problematic laser liftoff. This will eliminate the need for ultra-low defect (e.g., threading dislocation density, TDD < 1E7 cm-2), allows lower resistance, uniform p-contact on the bottom with better optical reflectivity, thinner top n-contact with less absorption, and overall reduced fabrication cost.

Authors:
 [1]
  1. Lightwave Photonics, Inc., St. Paul, MN (United States)
Publication Date:
Research Org.:
Lightwave Photonics, Inc., St. Paul, MN (United States)
Sponsoring Org.:
USDOE Office of Science and Technology (ST)
Contributing Org.:
Lightwave Photonics, Inc., University of Central Florida
OSTI Identifier:
1435957
Report Number(s):
SC0017681
DOE Contract Number:  
SC0017681
Type / Phase:
SBIR (Phase I)
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; 300nm; detection; UV; APD; Photo detector; Photo-detector

Citation Formats

Rothwell, Sara. Large-area, low-voltage, GaN-based avalanche photodiode arrays for application in harsh environments. United States: N. p., 2018. Web.
Rothwell, Sara. Large-area, low-voltage, GaN-based avalanche photodiode arrays for application in harsh environments. United States.
Rothwell, Sara. Fri . "Large-area, low-voltage, GaN-based avalanche photodiode arrays for application in harsh environments". United States.
@article{osti_1435957,
title = {Large-area, low-voltage, GaN-based avalanche photodiode arrays for application in harsh environments},
author = {Rothwell, Sara},
abstractNote = {In this program, Lightwave Photonics, Inc. (LPI), in collaboration with the University of Central Florida, worked to develop a robust, high-performance GaN-based APD arrays on novel lattice-matched metallic substrates for high sensitivity UV light detection. LPI has previously developed and patented epitaxial structures that combine high-quality III-nitride and metal-nitride layers for high performance devices on Si and sapphire substrates. In this project, LPI employed this technology to both grow high-quality APD structures and to allow a low-cost and reliable flip chip packaging (n-type GaN on top), and substrate separation by wet chemical etching, instead of the more problematic laser liftoff. This will eliminate the need for ultra-low defect (e.g., threading dislocation density, TDD < 1E7 cm-2), allows lower resistance, uniform p-contact on the bottom with better optical reflectivity, thinner top n-contact with less absorption, and overall reduced fabrication cost.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}

Technical Report:
This technical report may be released as soon as May 4, 2022
Other availability
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