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Title: High-Temperature Annealing of CdZnTe Detectors

Abstract

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle of bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.

Authors:
 [1];  [1];  [1]; ORCiD logo [2];  [3];  [4];  [1]; ORCiD logo [5]
  1. Korea Univ., Sejong (South Korea)
  2. Kyushu Univ., Fukuoka (Japan)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Savannah River National Lab., Aiken, SC (United States)
  5. Korea Univ., Seoul (South Korea)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
OSTI Identifier:
1435728
Report Number(s):
BNL-203579-2018-JAAM
Journal ID: ISSN 0018-9499; TRN: US1900093
Grant/Contract Number:  
SC0012704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 64; Journal Issue: 12; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CdZnTe (CZT); CZT detectors

Citation Formats

Suh, J., Hwang, S., Yu, H., Yoon, Y., Bolotnikov, Aleksey E., James, Ralph B., Hong, J., and Kim, Kihyun. High-Temperature Annealing of CdZnTe Detectors. United States: N. p., 2017. Web. doi:10.1109/TNS.2017.2771378.
Suh, J., Hwang, S., Yu, H., Yoon, Y., Bolotnikov, Aleksey E., James, Ralph B., Hong, J., & Kim, Kihyun. High-Temperature Annealing of CdZnTe Detectors. United States. doi:10.1109/TNS.2017.2771378.
Suh, J., Hwang, S., Yu, H., Yoon, Y., Bolotnikov, Aleksey E., James, Ralph B., Hong, J., and Kim, Kihyun. Fri . "High-Temperature Annealing of CdZnTe Detectors". United States. doi:10.1109/TNS.2017.2771378. https://www.osti.gov/servlets/purl/1435728.
@article{osti_1435728,
title = {High-Temperature Annealing of CdZnTe Detectors},
author = {Suh, J. and Hwang, S. and Yu, H. and Yoon, Y. and Bolotnikov, Aleksey E. and James, Ralph B. and Hong, J. and Kim, Kihyun},
abstractNote = {The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle of bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.},
doi = {10.1109/TNS.2017.2771378},
journal = {IEEE Transactions on Nuclear Science},
issn = {0018-9499},
number = 12,
volume = 64,
place = {United States},
year = {2017},
month = {11}
}

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