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Title: Device and methods for writing and erasing analog information in small memory units via voltage pulses

Abstract

Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

Inventors:
;
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1435632
Patent Number(s):
9,947,379
Application Number:
15/287,552
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Oct 06
Country of Publication:
United States
Language:
English

Citation Formats

El Gabaly Marquez, Farid, and Talin, Albert Alec. Device and methods for writing and erasing analog information in small memory units via voltage pulses. United States: N. p., 2018. Web.
El Gabaly Marquez, Farid, & Talin, Albert Alec. Device and methods for writing and erasing analog information in small memory units via voltage pulses. United States.
El Gabaly Marquez, Farid, and Talin, Albert Alec. Tue . "Device and methods for writing and erasing analog information in small memory units via voltage pulses". United States. doi:. https://www.osti.gov/servlets/purl/1435632.
@article{osti_1435632,
title = {Device and methods for writing and erasing analog information in small memory units via voltage pulses},
author = {El Gabaly Marquez, Farid and Talin, Albert Alec},
abstractNote = {Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 17 00:00:00 EDT 2018},
month = {Tue Apr 17 00:00:00 EDT 2018}
}

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