skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Abstract

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4eV . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.

Authors:
 [1];  [2]; ORCiD logo [3];  [1];  [4]; ORCiD logo [1]
  1. Morgan State Univ., Baltimore, MD (United States). Dept. of Physics and Engineering Physics
  2. Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
  3. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Materials Science Measurement Div.
  4. Morgan State Univ., Baltimore, MD (United States). Dept. of Civil Engineering
Publication Date:
Research Org.:
Morgan State Univ., Baltimore, MD (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1435171
Grant/Contract Number:  
NA0000720
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Micromachines
Additional Journal Information:
Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2072-666X
Publisher:
MDPI
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lan, Yucheng, Li, Jianye, Wong-Ng, Winnie, Derbeshi, Rola M., Li, Jiang, and Lisfi, Abdellah. Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review. United States: N. p., 2016. Web. doi:10.3390/mi7090121.
Lan, Yucheng, Li, Jianye, Wong-Ng, Winnie, Derbeshi, Rola M., Li, Jiang, & Lisfi, Abdellah. Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review. United States. doi:10.3390/mi7090121.
Lan, Yucheng, Li, Jianye, Wong-Ng, Winnie, Derbeshi, Rola M., Li, Jiang, and Lisfi, Abdellah. Tue . "Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review". United States. doi:10.3390/mi7090121. https://www.osti.gov/servlets/purl/1435171.
@article{osti_1435171,
title = {Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review},
author = {Lan, Yucheng and Li, Jianye and Wong-Ng, Winnie and Derbeshi, Rola M. and Li, Jiang and Lisfi, Abdellah},
abstractNote = {Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4eV . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.},
doi = {10.3390/mi7090121},
journal = {Micromachines},
number = 9,
volume = 7,
place = {United States},
year = {Tue Aug 23 00:00:00 EDT 2016},
month = {Tue Aug 23 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

A GaN bulk crystal with improved structural�quality grown by the ammonothermal�method
journal, July 2007

  • Hashimoto, Tadao; Wu, Feng; Speck, James S.
  • Nature Materials, Vol. 6, Issue 8, p. 568-571
  • DOI: 10.1038/nmat1955

Porous GaN nanowires synthesized using thermal chemical vapor deposition
journal, July 2003