Measurement of EUV lithography pupil amplitude and phase variation via image-based methodology

Journal Article · Fri Apr 01 00:00:00 EDT 2016 · Journal of Micro/Nanolithography, MEMS, and MOEMS

DOI:https://doi.org/10.1117/1.JMM.15.2.023508· OSTI ID:1435064

Levinson, Zachary ^[1]; Verduijn, Erik ^[2]; Wood, Obert R. ^[2]; Mangat, Pawitter ^[2]; Goldberg, Kenneth A. ^[3]; Benk, Markus P. ^[3]; Wojdyla, Antoine ^[3]; Smith, Bruce W. ^[1]

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1. Rochester Institute of Technology, Rochester, NY (United States)
2. GLOBALFOUNDRIES, Malta, NY (United States)
3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Here, an approach to image-based EUV aberration metrology using binary mask targets and iterative model-based solutions to extract both the amplitude and phase components of the aberrated pupil function is presented. The approach is enabled through previously developed modeling, fitting, and extraction algorithms. We seek to examine the behavior of pupil amplitude variation in real-optical systems. Optimized target images were captured under several conditions to fit the resulting pupil responses. Both the amplitude and phase components of the pupil function were extracted from a zone-plate-based EUV mask microscope. The pupil amplitude variation was expanded in three different bases: Zernike polynomials, Legendre polynomials, and Hermite polynomials. It was found that the Zernike polynomials describe pupil amplitude variation most effectively of the three.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 1435064
• Journal Information: Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 15, Issue 2; ISSN 1932-5150
• Publisher: SPIE
• Country of Publication: United States
• Language: English

Related Subjects

60 APPLIED LIFE SCIENCES