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Title: Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam

Journal Article · · Small
ORCiD logo [1];  [2];  [3];  [4];  [2];  [5];  [6];  [7];  [6];  [4];  [6];  [8];  [8];  [1];  [9];  [6];  [6]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
  2. Harvard Univ., Cambridge MA (United States). Center for Nanoscale Systems
  3. Univ. of California, San Diego, CA (United States). Dept. of Physics
  4. Carl Zeiss Microscopy, LLC, Peabody, MA (United States)
  5. Nanyang Technological Univ., Singapore (Singapore). School of Physical and Mathematical Sciences, Division of Physics and Applied Physics
  6. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics
  7. The Pennsylvania State Univ., University Park, PA (United States). Dept. of Electrical Engineering
  8. National Inst. for Materials Science, Ibaraki (Japan)
  9. Columbia Univ., New York, NY (United States). Dept. of Physics

The controlled nanoscale patterning of 2D materials is a promising approach for engineering the optoelectronic, thermal, and mechanical properties of these materials to achieve novel functionalities and devices. Herein, high-resolution patterning of hexagonal boron nitride (h-BN) is demonstrated via both helium and neon ion beams and an optimal dosage range for both ions that serve as a baseline for insulating 2D materials is identified. Through this nanofabrication approach, a grating with a 35 nm pitch, individual structure sizes down to 20 nm, and additional nanostructures created by patterning crystal step edges are demonstrated. Raman spectroscopy is used to study the defects induced by the ion beam patterning and is correlated to scanning probe microscopy. Photothermal and scanning near-field optical microscopy measure the resulting near-field absorption and scattering of the nanostructures. These measurements reveal a large photothermal expansion of nanostructured h-BN that is dependent on the height to width aspect ratio of the nanostructures. This effect is attributed to the large anisotropy of the thermal expansion coefficients of h-BN and the nanostructuring implemented. Finally, the photothermal expansion should be present in other van der Waals materials with large anisotropy and can lead to applications such as nanomechanical switches driven by light.

Research Organization:
Energy Frontier Research Centers (EFRC), Washington D.C. (United States). Center for Excitonics (CE)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0001088
OSTI ID:
1470540
Alternate ID(s):
OSTI ID: 1434374
Journal Information:
Small, Vol. 14, Issue 22; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; ISSN 1613-6810
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 11 works
Citation information provided by
Web of Science

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Cited By (5)

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting journal June 2019
Time-effective strategies for the fabrication of poly- and single-crystalline gold nano-structures by focused helium ion beam milling journal March 2019
Selective excitation and imaging of ultraslow phonon polaritons in thin hexagonal boron nitride crystals journal June 2018
Plasmon-enhanced light–matter interactions and applications journal April 2019
Selective excitation and imaging of ultraslow phonon polaritons in thin hexagonal boron nitride crystals preprint January 2017