Topological phase transitions and quantum Hall effect in the graphene family

Ledwith, Patrick John; Kort-Kamp, Wilton Junior de Melo; Dalvit, Diego Alejandro Roberto

doi:10.1103/PhysRevB.97.165426

Title: Topological phase transitions and quantum Hall effect in the graphene family

Journal Article · Sun Apr 15 00:00:00 EDT 2018 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.97.165426· OSTI ID:1435530

Ledwith, Patrick John ^[1];

^[2];

^[2]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaks which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. As a result, this complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1435530

Alternate ID(s):: OSTI ID: 1434180

Report Number(s):: LA-UR-17-30904; PRBMDO; TRN: US1900067

Journal Information:: Physical Review B, Vol. 97, Issue 16; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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Impact of the hot phonon effect on electronic transport in monolayer silicene Hamham, El Mokhtar; Iglesias, José M.; Pascual, Elena Journal of Physics D: Applied Physics, Vol. 51, Issue 41 https://doi.org/10.1088/1361-6463/aad94c	journal	September 2018
Recent progress of spintronics based on emerging 2D materials: CrI ₃ and Xenes Wei, Songrui; Tang, Xian; Liao, Xiaoqi Materials Research Express, Vol. 6, Issue 12 https://doi.org/10.1088/2053-1591/ab5d45	journal	December 2019
KITE: high-performance accurate modelling of electronic structure and response functions of large molecules, disordered crystals and heterostructures João, Simão M.; Anđelković, Miša; Covaci, Lucian Royal Society Open Science, Vol. 7, Issue 2 https://doi.org/10.1098/rsos.191809	journal	February 2020
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Interband and intraband transition, dynamical polarization and screening of the monolayer and bilayer silicene in low-energy tight-binding model Wu, Chen-Huan arXiv https://doi.org/10.48550/arxiv.1805.07736	text	January 2018

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