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Title: Silicon compatible Sn-based resistive switching memory

Abstract

Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.

Authors:
ORCiD logo [1];  [1];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [4];  [2];  [4];  [1]
  1. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, USA, Institute for Molecular Engineering
  2. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, USA
  3. Chemical Engineering and Materials Engineering Department, New Mexico Institute of Mining and Technology, Socorro, USA
  4. Department of Electrical Engineering, University of Norte Dame, Notre Dame, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1434172
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 20; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E., Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K. R. S., Datta, Suman, and Guha, Supratik. Silicon compatible Sn-based resistive switching memory. United Kingdom: N. p., 2018. Web. doi:10.1039/C8NR01540F.
Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E., Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K. R. S., Datta, Suman, & Guha, Supratik. Silicon compatible Sn-based resistive switching memory. United Kingdom. doi:10.1039/C8NR01540F.
Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E., Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K. R. S., Datta, Suman, and Guha, Supratik. Mon . "Silicon compatible Sn-based resistive switching memory". United Kingdom. doi:10.1039/C8NR01540F.
@article{osti_1434172,
title = {Silicon compatible Sn-based resistive switching memory},
author = {Sonde, Sushant and Chakrabarti, Bhaswar and Liu, Yuzi and Sasikumar, Kiran and Lin, Jianqiang and Stan, Liliana and Divan, Ralu and Ocola, Leonidas E. and Rosenmann, Daniel and Choudhury, Pabitra and Ni, Kai and Sankaranarayanan, Subramanian K. R. S. and Datta, Suman and Guha, Supratik},
abstractNote = {Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.},
doi = {10.1039/C8NR01540F},
journal = {Nanoscale},
number = 20,
volume = 10,
place = {United Kingdom},
year = {Mon Jan 01 00:00:00 EST 2018},
month = {Mon Jan 01 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on April 17, 2019
Publisher's Accepted Manuscript

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Works referenced in this record:

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