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Methods and apparatuses for detection of radiation with semiconductor image sensors

Patent ·
OSTI ID:1433859

A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.

Research Organization:
Idaho National Laboratory, Idaho Falls, ID (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC07-05ID14517
Assignee:
Battelle Energy Alliance, LLC (Idaho Falls, ID)
Patent Number(s):
9,939,534
Application Number:
14/080,542
OSTI ID:
1433859
Country of Publication:
United States
Language:
English

References (6)

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journal August 1996
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journal August 2006
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