Methods to introduce sub-micrometer, symmetry-breaking surface corrugation to silicon substrates to increase light trapping
Patent
·
OSTI ID:1433847
Provided is a method for fabricating a nanopatterned surface. The method includes forming a mask on a substrate, patterning the substrate to include a plurality of symmetry-breaking surface corrugations, and removing the mask. The mask includes a pattern defined by mask material portions that cover first surface portions of the substrate and a plurality of mask space portions that expose second surface portions of the substrate, wherein the plurality of mask space portions are arranged in a lattice arrangement having a row and column, and the row is not oriented parallel to a [110] direction of the substrate. The patterning the substrate includes anisotropically removing portions of the substrate exposed by the plurality of spaces.
- Research Organization:
- STC.UNM, Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- STC.UNM (Albuquerque, NM)
- Patent Number(s):
- 9,941,426
- Application Number:
- 15/389,936; CHE-1231046
- OSTI ID:
- 1433847
- Country of Publication:
- United States
- Language:
- English
Complex Chiral Colloids and Surfaces via High-Index Off-Cut Silicon
|
journal | April 2014 |
Similar Records
Process for selectively patterning epitaxial film growth on a semiconductor substrate
Process for selectively patterning epitaxial film growth on a semiconductor substrate
Process for selectively patterning epitaxial film growth on a semiconductor substrate
Patent
·
1985
·
OSTI ID:865997
Process for selectively patterning epitaxial film growth on a semiconductor substrate
Patent
·
1984
·
OSTI ID:5421003
Process for selectively patterning epitaxial film growth on a semiconductor substrate
Patent
·
1986
·
OSTI ID:5062260