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Title: High spin polarization in epitaxial Fe 4 N thin films using Cr and Ag as buffer layers

Authors:
 [1];  [2];  [3];  [3];  [2];  [4]; ORCiD logo [3];  [5]
  1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
  2. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
  3. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
  4. Western Digital Corporation, San Jose, California 95119, USA
  5. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA, Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1433574
Grant/Contract Number:  
SC0012670
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 112 Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Li, Hongshi, Li, Xuan, Kim, Dongrin, Zhao, Gejian, Zhang, Delin, Diao, Zhitao, Chen, Tingyong, and Wang, Jian-Ping. High spin polarization in epitaxial Fe 4 N thin films using Cr and Ag as buffer layers. United States: N. p., 2018. Web. doi:10.1063/1.5023698.
Li, Hongshi, Li, Xuan, Kim, Dongrin, Zhao, Gejian, Zhang, Delin, Diao, Zhitao, Chen, Tingyong, & Wang, Jian-Ping. High spin polarization in epitaxial Fe 4 N thin films using Cr and Ag as buffer layers. United States. doi:10.1063/1.5023698.
Li, Hongshi, Li, Xuan, Kim, Dongrin, Zhao, Gejian, Zhang, Delin, Diao, Zhitao, Chen, Tingyong, and Wang, Jian-Ping. Mon . "High spin polarization in epitaxial Fe 4 N thin films using Cr and Ag as buffer layers". United States. doi:10.1063/1.5023698.
@article{osti_1433574,
title = {High spin polarization in epitaxial Fe 4 N thin films using Cr and Ag as buffer layers},
author = {Li, Hongshi and Li, Xuan and Kim, Dongrin and Zhao, Gejian and Zhang, Delin and Diao, Zhitao and Chen, Tingyong and Wang, Jian-Ping},
abstractNote = {},
doi = {10.1063/1.5023698},
journal = {Applied Physics Letters},
number = 16,
volume = 112,
place = {United States},
year = {Mon Apr 16 00:00:00 EDT 2018},
month = {Mon Apr 16 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on April 18, 2019
Publisher's Accepted Manuscript

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