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Title: Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis

Abstract

Cu(In1-xGax)Se2 (CIGS) thin films with x=0 (CIS) and x=0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 degrees C, followed by selenization treatment at 550 degrees C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x=0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.

Authors:
ORCiD logo; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1433480
Report Number(s):
NREL/JA-5K00-71317
Journal ID: ISSN 0957-4522
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Journal of Materials Science Materials in Electronics
Additional Journal Information:
Journal Volume: none; Journal Issue: none; Journal ID: ISSN 0957-4522
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; chemical analysis; pyrolysis; scanning electron microscopy; selenium compounds; substrates; thin films; x-ray diffraction

Citation Formats

Babu, B. J., Egaas, B., and Velumani, S. Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis. United States: N. p., 2018. Web. doi:10.1007/s10854-018-8916-4.
Babu, B. J., Egaas, B., & Velumani, S. Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis. United States. doi:10.1007/s10854-018-8916-4.
Babu, B. J., Egaas, B., and Velumani, S. Wed . "Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis". United States. doi:10.1007/s10854-018-8916-4.
@article{osti_1433480,
title = {Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis},
author = {Babu, B. J. and Egaas, B. and Velumani, S.},
abstractNote = {Cu(In1-xGax)Se2 (CIGS) thin films with x=0 (CIS) and x=0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 degrees C, followed by selenization treatment at 550 degrees C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x=0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.},
doi = {10.1007/s10854-018-8916-4},
journal = {Journal of Materials Science Materials in Electronics},
issn = {0957-4522},
number = none,
volume = none,
place = {United States},
year = {2018},
month = {3}
}