Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis
Abstract
Cu(In1-xGax)Se2 (CIGS) thin films with x=0 (CIS) and x=0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 degrees C, followed by selenization treatment at 550 degrees C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x=0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.
- Authors:
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1433480
- Report Number(s):
- NREL/JA-5K00-71317
Journal ID: ISSN 0957-4522
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Materials Science Materials in Electronics
- Additional Journal Information:
- Journal Volume: none; Journal Issue: none; Journal ID: ISSN 0957-4522
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; chemical analysis; pyrolysis; scanning electron microscopy; selenium compounds; substrates; thin films; x-ray diffraction
Citation Formats
Babu, B. J., Egaas, B., and Velumani, S. Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis. United States: N. p., 2018.
Web. doi:10.1007/s10854-018-8916-4.
Babu, B. J., Egaas, B., & Velumani, S. Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis. United States. https://doi.org/10.1007/s10854-018-8916-4
Babu, B. J., Egaas, B., and Velumani, S. 2018.
"Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis". United States. https://doi.org/10.1007/s10854-018-8916-4.
@article{osti_1433480,
title = {Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis},
author = {Babu, B. J. and Egaas, B. and Velumani, S.},
abstractNote = {Cu(In1-xGax)Se2 (CIGS) thin films with x=0 (CIS) and x=0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 degrees C, followed by selenization treatment at 550 degrees C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x=0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.},
doi = {10.1007/s10854-018-8916-4},
url = {https://www.osti.gov/biblio/1433480},
journal = {Journal of Materials Science Materials in Electronics},
issn = {0957-4522},
number = none,
volume = none,
place = {United States},
year = {Wed Mar 21 00:00:00 EDT 2018},
month = {Wed Mar 21 00:00:00 EDT 2018}
}
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