Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Jung, Daehwan; Herrick, Robert; Norman, Justin; Turnlund, Katherine; Jan, Catherine; Feng, Kaiyin; Gossard, Arthur C.; Bowers, John E.

doi:10.1063/1.5026147

Title: Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Journal Article · Fri Apr 13 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5026147· OSTI ID:1433041

Jung, Daehwan; Herrick, Robert; Norman, Justin;

; Jan, Catherine;

; Gossard, Arthur C.; Bowers, John E.

We investigate the impact of threading dislocation density on the reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8 × 108 cm−2 to 7.3 × 106 cm−2 has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 °C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 × 106 h. An accelerated laser aging test at an elevated temperature (60 °C) reveals that p-modulation doped quantum dot lasers on Si retain superior reliability over unintentionally doped ones. These results suggest that epitaxially grown quantum dot lasers could be a viable approach to realize a reliable, scalable, and efficient light source on Si.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR000067

OSTI ID:: 1433041

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 112 Journal Issue: 15; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 107 works

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