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Title: Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Authors:
 [1];  [2];  [3]; ORCiD logo [1];  [2]; ORCiD logo [4];  [5];  [5]
  1. Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA
  2. Intel Corporation, Santa Clara, California 95054, USA
  3. Materials Department, University of California, Santa Barbara, California 93106, USA
  4. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
  5. Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA, Materials Department, University of California, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1433041
Grant/Contract Number:
AR000067
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 15; Related Information: CHORUS Timestamp: 2018-04-13 11:39:41; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Jung, Daehwan, Herrick, Robert, Norman, Justin, Turnlund, Katherine, Jan, Catherine, Feng, Kaiyin, Gossard, Arthur C., and Bowers, John E. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si. United States: N. p., 2018. Web. doi:10.1063/1.5026147.
Jung, Daehwan, Herrick, Robert, Norman, Justin, Turnlund, Katherine, Jan, Catherine, Feng, Kaiyin, Gossard, Arthur C., & Bowers, John E. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si. United States. doi:10.1063/1.5026147.
Jung, Daehwan, Herrick, Robert, Norman, Justin, Turnlund, Katherine, Jan, Catherine, Feng, Kaiyin, Gossard, Arthur C., and Bowers, John E. Mon . "Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si". United States. doi:10.1063/1.5026147.
@article{osti_1433041,
title = {Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si},
author = {Jung, Daehwan and Herrick, Robert and Norman, Justin and Turnlund, Katherine and Jan, Catherine and Feng, Kaiyin and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1063/1.5026147},
journal = {Applied Physics Letters},
number = 15,
volume = 112,
place = {United States},
year = {Mon Apr 09 00:00:00 EDT 2018},
month = {Mon Apr 09 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on April 13, 2019
Publisher's Accepted Manuscript

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