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Title: Near-infrared light emitting device using semiconductor nanocrystals

Patent ·
OSTI ID:1432811
; ; ; ; ; ; ;

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
SC0001088
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Number(s):
9,935,240
Application Number:
14/101,867
OSTI ID:
1432811
Resource Relation:
Patent File Date: 2013 Dec 12
Country of Publication:
United States
Language:
English

References (12)

Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots patent April 2008
Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions patent November 2014
Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same patent-application June 2005
Optically-regulated optical emission using colloidal quantum dot nanocrystals patent-application October 2005
Micronized semiconductor nanocrystal complexes and methods of making and using same patent-application March 2007
Light emitting devices including semiconductor nanocrystals patent-application May 2007
Light emitting device including semiconductor nanocrystals patent-application March 2008
Light-Emitting Element, Light-Emitting Device, And Information Display Device patent-application March 2009
Light-emitting devices and displays with improved performance patent-application November 2009
Quantum Dot Electroluminescent Device patent-application May 2010
Light Emitting Device Including Semiconductor Nanocrystals patent-application April 2011
Quantum Dot-Fullerene Junction Optoelectronic Devices patent-application September 2012

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