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Title: Strain-Induced Spin-Resonance Shifts in Silicon Devices

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1432585
Grant/Contract Number:
AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 9; Journal Issue: 4; Related Information: CHORUS Timestamp: 2018-04-10 14:29:43; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Pla, J. J., Bienfait, A., Pica, G., Mansir, J., Mohiyaddin, F. A., Zeng, Z., Niquet, Y. M., Morello, A., Schenkel, T., Morton, J. J. L., and Bertet, P.. Strain-Induced Spin-Resonance Shifts in Silicon Devices. United States: N. p., 2018. Web. doi:10.1103/PhysRevApplied.9.044014.
Pla, J. J., Bienfait, A., Pica, G., Mansir, J., Mohiyaddin, F. A., Zeng, Z., Niquet, Y. M., Morello, A., Schenkel, T., Morton, J. J. L., & Bertet, P.. Strain-Induced Spin-Resonance Shifts in Silicon Devices. United States. doi:10.1103/PhysRevApplied.9.044014.
Pla, J. J., Bienfait, A., Pica, G., Mansir, J., Mohiyaddin, F. A., Zeng, Z., Niquet, Y. M., Morello, A., Schenkel, T., Morton, J. J. L., and Bertet, P.. Tue . "Strain-Induced Spin-Resonance Shifts in Silicon Devices". United States. doi:10.1103/PhysRevApplied.9.044014.
@article{osti_1432585,
title = {Strain-Induced Spin-Resonance Shifts in Silicon Devices},
author = {Pla, J. J. and Bienfait, A. and Pica, G. and Mansir, J. and Mohiyaddin, F. A. and Zeng, Z. and Niquet, Y. M. and Morello, A. and Schenkel, T. and Morton, J. J. L. and Bertet, P.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.9.044014},
journal = {Physical Review Applied},
number = 4,
volume = 9,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2018},
month = {Tue Apr 10 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on April 10, 2019
Publisher's Accepted Manuscript

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