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Title: Structural, vibrational, and electronic topological transitions of Bi 1.5Sb 0.5Te 1.8Se 1.2 under pressure

Abstract

Topological insulators have been the subject of intense research interest due to their unique surface states that are topologically protected against scattering or defects. However, the relationship between the crystal structure and topological insulator state remains to be clarified. Here, we show the effects of hydrostatic pressure on the structural, vibrational, and topological properties of the topological insulator Bi 1.5Sb 0.5Te 1.8Se 1.2 up to 45 GPa using X-ray diffraction and Raman spectroscopy in a diamond anvil cell, together with first-principles theoretical calculations. Two pressure-induced structural phase transitions were observed: from ambient rhombohedral R3¡m phase to a monoclinic C2/m phase at ~13 GPa, and to a disordered I4/mmm phase at ~22 GPa. In addition, the alloy undergoes several electronic transitions within the R3¯m phase: indirect to direct bulk band gap transition at ~5.8 GPa, bulk gap closing with an appearance of Dirac semimetal (DSM) state at ~8.2 GPa, and to a trivial semimetal state at ~12.1 GPa. Anomalies in c/a ratio and Raman full width at half maximum that coincide with the DSM phase suggest the contribution of electron-phonon coupling to the transition. Here, compared to binary end members Bi 2Te 3, Bi 2Se 3, and Sb 2Te 3, themore » structural phase transition and anomaly were observed at higher pressures in Bi 1.5Sb 0.5Te 1.8Se 1.2. These results suggest that the topological transitions are precursors to the structural phase transitions.« less

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [5];  [4]; ORCiD logo [2];  [1];  [6]
  1. Univ. of Texas, Austin, TX (United States)
  2. Indian Inst. of Science, Bangalore (India)
  3. Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
  4. Brimrose Corp., Sparks, MD (United States)
  5. U.S. Army RDECOM-ARDEC, Picatinny Arsenal, NJ (United States)
  6. Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Univ. of Texas, Austin, TX (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
US Army Research Office (ARO)
OSTI Identifier:
1431356
Grant/Contract Number:  
FA5209-16-P-0090; W911NF-13-1-0364
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 11; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
ENGLISH
Subject:
42 ENGINEERING; Hydrostatics; Diamond anvil cells; Crystal structure; Semimetals; Chemical elements; X-ray diffraction; Raman spectroscopy; Phonons; Topological insulator; Phase transitions

Citation Formats

Kim, Joon-Seok, Juneja, Rinkle, Salke, Nilesh P., Palosz, Witold, Swaminathan, Venkataraman, Trivedi, Sudhir, Singh, Abhishek K., Akinwande, Deji, and Lin, Jung-Fu. Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure. United States: N. p., 2018. Web. doi:10.1063/1.5018857.
Kim, Joon-Seok, Juneja, Rinkle, Salke, Nilesh P., Palosz, Witold, Swaminathan, Venkataraman, Trivedi, Sudhir, Singh, Abhishek K., Akinwande, Deji, & Lin, Jung-Fu. Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure. United States. doi:10.1063/1.5018857.
Kim, Joon-Seok, Juneja, Rinkle, Salke, Nilesh P., Palosz, Witold, Swaminathan, Venkataraman, Trivedi, Sudhir, Singh, Abhishek K., Akinwande, Deji, and Lin, Jung-Fu. Tue . "Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure". United States. doi:10.1063/1.5018857. https://www.osti.gov/servlets/purl/1431356.
@article{osti_1431356,
title = {Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure},
author = {Kim, Joon-Seok and Juneja, Rinkle and Salke, Nilesh P. and Palosz, Witold and Swaminathan, Venkataraman and Trivedi, Sudhir and Singh, Abhishek K. and Akinwande, Deji and Lin, Jung-Fu},
abstractNote = {Topological insulators have been the subject of intense research interest due to their unique surface states that are topologically protected against scattering or defects. However, the relationship between the crystal structure and topological insulator state remains to be clarified. Here, we show the effects of hydrostatic pressure on the structural, vibrational, and topological properties of the topological insulator Bi1.5Sb0.5Te1.8Se1.2 up to 45 GPa using X-ray diffraction and Raman spectroscopy in a diamond anvil cell, together with first-principles theoretical calculations. Two pressure-induced structural phase transitions were observed: from ambient rhombohedral R3¡m phase to a monoclinic C2/m phase at ~13 GPa, and to a disordered I4/mmm phase at ~22 GPa. In addition, the alloy undergoes several electronic transitions within the R3¯m phase: indirect to direct bulk band gap transition at ~5.8 GPa, bulk gap closing with an appearance of Dirac semimetal (DSM) state at ~8.2 GPa, and to a trivial semimetal state at ~12.1 GPa. Anomalies in c/a ratio and Raman full width at half maximum that coincide with the DSM phase suggest the contribution of electron-phonon coupling to the transition. Here, compared to binary end members Bi2Te3, Bi2Se3, and Sb2Te3, the structural phase transition and anomaly were observed at higher pressures in Bi1.5Sb0.5Te1.8Se1.2. These results suggest that the topological transitions are precursors to the structural phase transitions.},
doi = {10.1063/1.5018857},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 123,
place = {United States},
year = {2018},
month = {3}
}

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