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Title: Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors

Authors:
 [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [3];  [1]; ORCiD logo [4]
  1. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA
  2. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA, Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  3. Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  4. Department of Chemistry and Biochemistry, University of California, Los Angeles CA 90095 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1431136
Grant/Contract Number:  
SC0008931
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials Journal Volume: 30 Journal Issue: 21; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, and Duan, Xiangfeng. Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors. Germany: N. p., 2018. Web. doi:10.1002/adma.201705934.
Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, & Duan, Xiangfeng. Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors. Germany. doi:10.1002/adma.201705934.
Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, and Duan, Xiangfeng. Mon . "Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors". Germany. doi:10.1002/adma.201705934.
@article{osti_1431136,
title = {Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors},
author = {Guo, Jian and Liu, Yuan and Ma, Yue and Zhu, Enbo and Lee, Shannon and Lu, Zixuan and Zhao, Zipeng and Xu, Changhao and Lee, Sung-Joon and Wu, Hao and Kovnir, Kirill and Huang, Yu and Duan, Xiangfeng},
abstractNote = {},
doi = {10.1002/adma.201705934},
journal = {Advanced Materials},
number = 21,
volume = 30,
place = {Germany},
year = {Mon Apr 02 00:00:00 EDT 2018},
month = {Mon Apr 02 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on April 2, 2019
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 1 work
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Works referenced in this record:

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High Performance Multilayer MoS2Transistors with Scandium Contacts
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