skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

Abstract

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum ION/IOFF current ratio of 87.5.

Authors:
 [1];  [2]; ORCiD logo [3];  [4]; ORCiD logo [4]; ORCiD logo [3]; ORCiD logo [5]
  1. AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Strasse 25, Aachen, Germany
  2. Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 2, Aachen, Germany
  3. II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, Köln, Germany
  4. Department of Chemistry, University of California Berkeley, Berkeley, California 94720, United States
  5. AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Strasse 25, Aachen, Germany, Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 2, Aachen, Germany
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Rheinisch Westfalische Technische Hochschule Aachen (RWTH) Aachen Univ., Aachen (Germany)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1430749
Alternate Identifier(s):
OSTI ID: 1461136; OSTI ID: 1508758
Grant/Contract Number:  
SC0010409; AC02-05CH11231; 648589; NW-1-1-036b
Resource Type:
Journal Article: Published Article
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Name: ACS Applied Materials and Interfaces Journal Volume: 10 Journal Issue: 12; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 7-AGNRs; back-gated field-effect transistors; bandgap; graphene nanoribbons; mobility

Citation Formats

Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Grüneis, Alexander, and Lemme, Max C. Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons. United States: N. p., 2018. Web. doi:10.1021/acsami.8b01116.
Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Grüneis, Alexander, & Lemme, Max C. Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons. United States. doi:10.1021/acsami.8b01116.
Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Grüneis, Alexander, and Lemme, Max C. Thu . "Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons". United States. doi:10.1021/acsami.8b01116.
@article{osti_1430749,
title = {Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons},
author = {Passi, Vikram and Gahoi, Amit and Senkovskiy, Boris V. and Haberer, Danny and Fischer, Felix R. and Grüneis, Alexander and Lemme, Max C.},
abstractNote = {We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum ION/IOFF current ratio of 87.5.},
doi = {10.1021/acsami.8b01116},
journal = {ACS Applied Materials and Interfaces},
issn = {1944-8244},
number = 12,
volume = 10,
place = {United States},
year = {2018},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1021/acsami.8b01116

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share: