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Title: Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

Abstract

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I ON/I OF Fcurrent ratio of 87.5.

Authors:
 [1];  [2]; ORCiD logo [3];  [4]; ORCiD logo [4]; ORCiD logo [5]; ORCiD logo [6]
  1. AMO GmbH, Advanced Microelectronic Center Aachen, Aachen (Germany)
  2. RWTH Aachen Univ. (Germany). Chair of Electronic Devices
  3. Univ. zu Koln, Koln (Germany). II. Physikalisches Inst.
  4. Univ. of California, Berkeley, CA (United States). Dept. of Chemistry
  5. Univ. zu Koln, Koln (Germany). II. Physikalisches Inst.
  6. AMO GmbH, Advanced Microelectronic Center Aachen, Aachen (Germany); RWTH Aachen Univ. (Germany). Chair of Electronic Devices
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1430749
Alternate Identifier(s):
OSTI ID: 1461136
Grant/Contract Number:  
AC02-05CH11231; 648589; NW-1-1-036b; SC0010409
Resource Type:
Journal Article: Published Article
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 10; Journal Issue: 12; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 7-AGNRs; back-gated field-effect transistors; bandgap; graphene nanoribbons; mobility

Citation Formats

Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Gruneis, Alexander, and Lemme, Max C.. Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons. United States: N. p., 2018. Web. doi:10.1021/acsami.8b01116.
Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Gruneis, Alexander, & Lemme, Max C.. Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons. United States. doi:10.1021/acsami.8b01116.
Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Gruneis, Alexander, and Lemme, Max C.. Thu . "Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons". United States. doi:10.1021/acsami.8b01116.
@article{osti_1430749,
title = {Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons},
author = {Passi, Vikram and Gahoi, Amit and Senkovskiy, Boris V. and Haberer, Danny and Fischer, Felix R. and Gruneis, Alexander and Lemme, Max C.},
abstractNote = {We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum ION/IOF Fcurrent ratio of 87.5.},
doi = {10.1021/acsami.8b01116},
journal = {ACS Applied Materials and Interfaces},
number = 12,
volume = 10,
place = {United States},
year = {Thu Mar 08 00:00:00 EST 2018},
month = {Thu Mar 08 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1021/acsami.8b01116

Citation Metrics:
Cited by: 2 works
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