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Title: Role of defects in the carrier-tunable topological-insulator ( Bi 1 x Sb x ) 2 Te 3 thin films

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1430159
Grant/Contract Number:
SC0014335
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 12; Related Information: CHORUS Timestamp: 2018-03-28 12:02:42; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, and Madhavan, Vidya. Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.125150.
Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, & Madhavan, Vidya. Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films. United States. doi:10.1103/PhysRevB.97.125150.
Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, and Madhavan, Vidya. Wed . "Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films". United States. doi:10.1103/PhysRevB.97.125150.
@article{osti_1430159,
title = {Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films},
author = {Scipioni, Kane L. and Wang, Zhenyu and Maximenko, Yulia and Katmis, Ferhat and Steiner, Charlie and Madhavan, Vidya},
abstractNote = {},
doi = {10.1103/PhysRevB.97.125150},
journal = {Physical Review B},
number = 12,
volume = 97,
place = {United States},
year = {Wed Mar 28 00:00:00 EDT 2018},
month = {Wed Mar 28 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on March 28, 2019
Publisher's Accepted Manuscript

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