Evidence from EXAFS for Different Ta/Ti Site Occupancy in High Critical Current Density Nb3Sn Superconductor Wires

Heald, Steve M.; Tarantini, Chiara; Lee, Peter J.; Brown, Michael D.; Sung, ZuHawn; Ghosh, Arup K.; Larbalestier, David C.

doi:10.1038/s41598-018-22924-3

Title: Evidence from EXAFS for Different Ta/Ti Site Occupancy in High Critical Current Density Nb₃Sn Superconductor Wires

Journal Article · Mon Mar 19 00:00:00 EDT 2018 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-018-22924-3· OSTI ID:1429849

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Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States). Magnet Division

To meet critical current density, J(c), targets for the Future Circular Collider (FCC), the planned replacement for the Large Hadron Collider (LHC), the high field performance of Nb3Sn must be improved, but champion J(c) values have remained static for the last 10 years. Making the A15 phase stoichiometric and enhancing the upper critical field H-c2 by Ti or Ta dopants are the standard strategies for enhancing high field performance but detailed recent studies show that even the best modern wires have broad composition ranges. To assess whether further improvement might be possible, we employed Extended X-ray Absorption Fine Structure (EXAFS) to determine the lattice site location of dopants in modern high-performance Nb3Sn strands with J(c) values amongst the best so far achieved. Although Ti and Ta primarily occupy the Nb sites in the A15 structure, we also find significant Ta occupancy on the Sn site. These findings indicate that the best performing Ti-doped stand is strongly sub-stoichiometric in Sn and that antisite disorder likely explains its high average H-c2 behavior. These new results suggest an important role for dopant and antisite disorder in minimizing superconducting property distributions and maximizing high field J(c) properties.

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Research Organization:: Florida State Univ., Tallahassee, FL (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), High Energy Physics (HEP); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012083; AC02-06CH11357

OSTI ID:: 1429849

Alternate ID(s):: OSTI ID: 1432371

Journal Information:: Scientific Reports, Vol. 8, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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Ta, Ti and Hf effects on Nb ₃ Sn high-field performance: temperature-dependent dopant occupancy and failure of Kramer extrapolation Tarantini, Chiara; Balachandran, Shreyas; Heald, Steve M. Superconductor Science and Technology, Vol. 32, Issue 12 https://doi.org/10.1088/1361-6668/ab4d9e	journal	November 2019

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Nb3Sn
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microstructure
EXAFS
doping
lattice sites

Title: Evidence from EXAFS for Different Ta/Ti Site Occupancy in High Critical Current Density Nb3Sn Superconductor Wires

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Title: Evidence from EXAFS for Different Ta/Ti Site Occupancy in High Critical Current Density Nb₃Sn Superconductor Wires