Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials
Abstract
Abstract not provided.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Univ. at Buffalo, NY (United States). Dept. of Electrical Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1429831
- Report Number(s):
- SAND-2017-9047J
656489
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Program Document
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Liu, P. Q., Reno, John L., and Brener, Igal. Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials. United States: N. p., 2017.
Web.
Liu, P. Q., Reno, John L., & Brener, Igal. Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials. United States.
Liu, P. Q., Reno, John L., and Brener, Igal. 2017.
"Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials". United States.
@article{osti_1429831,
title = {Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials},
author = {Liu, P. Q. and Reno, John L. and Brener, Igal},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1429831},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 2017},
month = {Tue Aug 01 00:00:00 EDT 2017}
}
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