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Title: Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials

Abstract

Abstract not provided.

Authors:
 [1];  [2];  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Univ. at Buffalo, NY (United States). Dept. of Electrical Engineering
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1429831
Report Number(s):
SAND-2017-9047J
656489
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Program Document
Country of Publication:
United States
Language:
English

Citation Formats

Liu, P. Q., Reno, John L., and Brener, Igal. Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials. United States: N. p., 2017. Web.
Liu, P. Q., Reno, John L., & Brener, Igal. Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials. United States.
Liu, P. Q., Reno, John L., and Brener, Igal. 2017. "Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials". United States.
@article{osti_1429831,
title = {Graphene Surface Plasmon Induced Strong Quenching of Infrared-active Optical Phonons in Thin Layers of Crystalline Materials},
author = {Liu, P. Q. and Reno, John L. and Brener, Igal},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1429831}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 2017},
month = {Tue Aug 01 00:00:00 EDT 2017}
}

Program Document:
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