skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Advanced Electronic Structure Calculations For Nanoelectronics Using Finite Element Bases and Effective Mass Theory.

Abstract

This paper describes our work over the past few years to use tools from quantum chemistry to describe electronic structure of nanoelectronic devices. These devices, dubbed "artificial atoms", comprise a few electrons, con ned by semiconductor heterostructures, impurities, and patterned electrodes, and are of intense interest due to potential applications in quantum information processing, quantum sensing, and extreme-scale classical logic. We detail two approaches we have employed: nite-element and Gaussian basis sets, exploring the interesting complications that arise when techniques that were intended to apply to atomic systems are instead used for artificial, solid-state devices.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1429801
Report Number(s):
SAND-2017-7107J
655084
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Program Document
Country of Publication:
United States
Language:
English

Citation Formats

Gamble, John King, Nielsen, Erik, Baczewski, Andrew David, Moussa, Jonathan Edward, Gao, Xujiao, Salinger, Andrew G., and Muller, Richard P. Advanced Electronic Structure Calculations For Nanoelectronics Using Finite Element Bases and Effective Mass Theory.. United States: N. p., 2017. Web.
Gamble, John King, Nielsen, Erik, Baczewski, Andrew David, Moussa, Jonathan Edward, Gao, Xujiao, Salinger, Andrew G., & Muller, Richard P. Advanced Electronic Structure Calculations For Nanoelectronics Using Finite Element Bases and Effective Mass Theory.. United States.
Gamble, John King, Nielsen, Erik, Baczewski, Andrew David, Moussa, Jonathan Edward, Gao, Xujiao, Salinger, Andrew G., and Muller, Richard P. Sat . "Advanced Electronic Structure Calculations For Nanoelectronics Using Finite Element Bases and Effective Mass Theory.". United States. doi:.
@article{osti_1429801,
title = {Advanced Electronic Structure Calculations For Nanoelectronics Using Finite Element Bases and Effective Mass Theory.},
author = {Gamble, John King and Nielsen, Erik and Baczewski, Andrew David and Moussa, Jonathan Edward and Gao, Xujiao and Salinger, Andrew G. and Muller, Richard P.},
abstractNote = {This paper describes our work over the past few years to use tools from quantum chemistry to describe electronic structure of nanoelectronic devices. These devices, dubbed "artificial atoms", comprise a few electrons, con ned by semiconductor heterostructures, impurities, and patterned electrodes, and are of intense interest due to potential applications in quantum information processing, quantum sensing, and extreme-scale classical logic. We detail two approaches we have employed: nite-element and Gaussian basis sets, exploring the interesting complications that arise when techniques that were intended to apply to atomic systems are instead used for artificial, solid-state devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 2017},
month = {Sat Jul 01 00:00:00 EDT 2017}
}

Program Document:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that may hold this item.

Save / Share: