skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Silicon Qubits

Abstract

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

Authors:
 [1];  [2]
  1. HRL Laboratories, LLC, Malibu, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1429799
Report Number(s):
SAND-2017-6873J
654896
DOE Contract Number:
AC04-94AL85000
Resource Type:
Program Document
Resource Relation:
Journal Name: Encyclopedia of Modern Optics (Second Edition); Journal Volume: 1
Country of Publication:
United States
Language:
English
Subject:
Charge qubit; CMOS; Donor; Exchange interaction; Heterostructure; Quantum computing; Quantum dot; Quantum measurement; SiGe; Single electron transistor; Spin qubit; STM lithography; Valley splitting

Citation Formats

Ladd, Thaddeus D., and Carroll, Malcolm S.. Silicon Qubits. United States: N. p., 2018. Web. doi:10.1016/B978-0-12-803581-8.09736-8.
Ladd, Thaddeus D., & Carroll, Malcolm S.. Silicon Qubits. United States. doi:10.1016/B978-0-12-803581-8.09736-8.
Ladd, Thaddeus D., and Carroll, Malcolm S.. Wed . "Silicon Qubits". United States. doi:10.1016/B978-0-12-803581-8.09736-8.
@article{osti_1429799,
title = {Silicon Qubits},
author = {Ladd, Thaddeus D. and Carroll, Malcolm S.},
abstractNote = {Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.},
doi = {10.1016/B978-0-12-803581-8.09736-8},
journal = {Encyclopedia of Modern Optics (Second Edition)},
number = ,
volume = 1,
place = {United States},
year = {Wed Feb 28 00:00:00 EST 2018},
month = {Wed Feb 28 00:00:00 EST 2018}
}

Program Document:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that may hold this item.

Save / Share: