Coupling MOS quantum dot and phosphorous donor qubit systems
Journal Article
·
· IEEE International Electron Devices Meeting
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Sherbrooke, Quebec (Canada)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- Work for Others (WFO)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1429777
- Report Number(s):
- SAND2017-4949J; 653191
- Journal Information:
- IEEE International Electron Devices Meeting, Vol. 2016; Conference: 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA (United States), 3-7 Dec 2016; ISSN 2380-9248
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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| Long-term drift of Si-MOS quantum dots with intentional donor implants | preprint | January 2018 |
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