skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

Abstract

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1429733
Report Number(s):
SAND-2017-1521J
Journal ID: ISSN 2162-8769; 654257
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Volume: 6; Journal Issue: 2; Journal ID: ISSN 2162-8769
Publisher:
Electrochemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kaplar, R. J., Allerman, A. A., Armstrong, A. M., Crawford, M. H., Dickerson, J. R., Fischer, A. J., Baca, A. G., and Douglas, E. A. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices. United States: N. p., 2016. Web. doi:10.1149/2.0111702jss.
Kaplar, R. J., Allerman, A. A., Armstrong, A. M., Crawford, M. H., Dickerson, J. R., Fischer, A. J., Baca, A. G., & Douglas, E. A. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices. United States. doi:10.1149/2.0111702jss.
Kaplar, R. J., Allerman, A. A., Armstrong, A. M., Crawford, M. H., Dickerson, J. R., Fischer, A. J., Baca, A. G., and Douglas, E. A. Tue . "Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices". United States. doi:10.1149/2.0111702jss. https://www.osti.gov/servlets/purl/1429733.
@article{osti_1429733,
title = {Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices},
author = {Kaplar, R. J. and Allerman, A. A. and Armstrong, A. M. and Crawford, M. H. and Dickerson, J. R. and Fischer, A. J. and Baca, A. G. and Douglas, E. A.},
abstractNote = {“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.},
doi = {10.1149/2.0111702jss},
journal = {ECS Journal of Solid State Science and Technology},
number = 2,
volume = 6,
place = {United States},
year = {Tue Dec 20 00:00:00 EST 2016},
month = {Tue Dec 20 00:00:00 EST 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 10 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

High Breakdown ( >1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
journal, September 2010