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Title: Molecular dynamics studies of InGaN growth on nonpolar ( 11 2 ¯ 0 ) GaN surfaces

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1429651
Alternate Identifier(s):
OSTI ID: 1418881; OSTI ID: 1429659
Report Number(s):
SAND2017-11142J; SAND-2017-11346J
Journal ID: ISSN 2475-9953; PRMHAR; 658073
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 1; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Chu, K., Gruber, J., Zhou, X. W., Jones, R. E., Lee, S. R., and Tucker, G. J. Molecular dynamics studies of InGaN growth on nonpolar (112¯0) GaN surfaces. United States: N. p., 2018. Web. doi:10.1103/PhysRevMaterials.2.013402.
Chu, K., Gruber, J., Zhou, X. W., Jones, R. E., Lee, S. R., & Tucker, G. J. Molecular dynamics studies of InGaN growth on nonpolar (112¯0) GaN surfaces. United States. doi:10.1103/PhysRevMaterials.2.013402.
Chu, K., Gruber, J., Zhou, X. W., Jones, R. E., Lee, S. R., and Tucker, G. J. Mon . "Molecular dynamics studies of InGaN growth on nonpolar (112¯0) GaN surfaces". United States. doi:10.1103/PhysRevMaterials.2.013402. https://www.osti.gov/servlets/purl/1429651.
@article{osti_1429651,
title = {Molecular dynamics studies of InGaN growth on nonpolar (112¯0) GaN surfaces},
author = {Chu, K. and Gruber, J. and Zhou, X. W. and Jones, R. E. and Lee, S. R. and Tucker, G. J.},
abstractNote = {Abstract not provided.},
doi = {10.1103/PhysRevMaterials.2.013402},
journal = {Physical Review Materials},
issn = {2475-9953},
number = 1,
volume = 2,
place = {United States},
year = {2018},
month = {1}
}

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Cited by: 1 work
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Figures / Tables:

Figure 1. Figure 1.: Simulated GaN films grown on GaN at (a) 1800 K (T/Tm = 0.50), (b) 2200 K (T/Tm = 0.62), and (c) 2400 K (T/Tm = 0.67).

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