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Title: Spin transport and spin torque in antiferromagnetic devices

Abstract

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Authors:
 [1];  [2];  [3];  [4];  [5]
  1. Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Institute of Physics, Academy of Sciences of the Czech Republic, Praha (Czech Republic)
  2. Institute of Physics, Academy of Sciences of the Czech Republic, Praha (Czech Republic)
  3. Univ. of Nottingham (United Kingdom). School of Physics and Astronomy
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  5. Tohoku Univ., Sendai (Japan). Center for Spintronics Integrated Systems, Center for Innovative Integrated Electronic Systems, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication and WPI Advanced Institute for Materials Research
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1429310
Grant/Contract Number:
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Physics
Additional Journal Information:
Journal Volume: 14; Journal Issue: 3; Journal ID: ISSN 1745-2473
Publisher:
Nature Publishing Group (NPG)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Magnetic properties and materials; Spintronics

Citation Formats

Zelezny, J., Wadley, P., Olejnik, K., Hoffmann, A., and Ohno, H. Spin transport and spin torque in antiferromagnetic devices. United States: N. p., 2018. Web. doi:10.1038/s41567-018-0062-7.
Zelezny, J., Wadley, P., Olejnik, K., Hoffmann, A., & Ohno, H. Spin transport and spin torque in antiferromagnetic devices. United States. doi:10.1038/s41567-018-0062-7.
Zelezny, J., Wadley, P., Olejnik, K., Hoffmann, A., and Ohno, H. Fri . "Spin transport and spin torque in antiferromagnetic devices". United States. doi:10.1038/s41567-018-0062-7.
@article{osti_1429310,
title = {Spin transport and spin torque in antiferromagnetic devices},
author = {Zelezny, J. and Wadley, P. and Olejnik, K. and Hoffmann, A. and Ohno, H.},
abstractNote = {Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.},
doi = {10.1038/s41567-018-0062-7},
journal = {Nature Physics},
number = 3,
volume = 14,
place = {United States},
year = {Fri Mar 02 00:00:00 EST 2018},
month = {Fri Mar 02 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on March 2, 2019
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