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Title: Gallium Oxide Large Area UV Sensors

Abstract

In this Phase I Program, we demonstrated the feasibility of a new generation of sensitive wide bandgap UV tunable photodiodes, which can detect small, fast pulses of UV lights and support detection of the Cherenkov light in crystals and glasses, scintillation light in neutrino, dark matter, and rare decay experiments. We believe the new tunable UV photodetector can replace the photomultiplier tubes in Cherenkov, neutrino, and dark matter detectors and save on size, weight, and required power. Furthermore, the SBIR team anticipates a variety of commercial applications for the UV photodetectors developed in this program. Solar- and visible-blind UV PDs are widely used in military, industrial, and commercial applications and are needed for applications, from solar observations, UV astronomy, missile tracking, automatization, short-range communication security, as well as environmental and biological research. Efficient large area wide bandgap semiconductor PDs can be used to support the detection of spacecraft based radiation as well. In summary, Ga 2O 3–based UV photodiodes were fabricated and characterized in this project. β-Ga 2O 3 layers were grown on sapphire and single crystal bulk Ga 2O 3 substrates. Tunability of energy bandgap of the Ga 2O 3 in UVA, UVB, and UVC ranges were accomplished bymore » alloying Ga 2O 3 with Al 2O 3 and In 2O 3. Feasibility of the Ga 2O 3–based UV photodiodes was tested using MOCVD growth of Ga 2O 3 and its alloys on sapphire and bulk Ga 2O 3 substrates, both of which were successfully demonstrated. High photo-to-dark current ratio and very low dark currents are achieved for the UV photodiodes.« less

Authors:
 [1];  [1];  [1];  [2];  [2];  [2]
  1. Structured Materials Industries, Inc., Piscataway, NJ (United States)
  2. Carnegie Mellon Univ., Pittsburgh, PA (United States)
Publication Date:
Research Org.:
Structured Materials Industries, Inc., Piscataway, NJ (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
OSTI Identifier:
1429272
Report Number(s):
DOE-SMI-0017885
42077
DOE Contract Number:  
SC0017885
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; 42 ENGINEERING; 36 MATERIALS SCIENCE; Ga2O3; ultraviolet; UV; sensor; photodiode; (AlGa)2O3; (InGa)2O3; particle physics experiments

Citation Formats

Okur, Serdal, Tompa, Gary S., Salagaj, Thomas, Lyle, Luke, Davis, Robert, and Porter, Lisa. Gallium Oxide Large Area UV Sensors. United States: N. p., 2018. Web. doi:10.2172/1429272.
Okur, Serdal, Tompa, Gary S., Salagaj, Thomas, Lyle, Luke, Davis, Robert, & Porter, Lisa. Gallium Oxide Large Area UV Sensors. United States. doi:10.2172/1429272.
Okur, Serdal, Tompa, Gary S., Salagaj, Thomas, Lyle, Luke, Davis, Robert, and Porter, Lisa. Sun . "Gallium Oxide Large Area UV Sensors". United States. doi:10.2172/1429272. https://www.osti.gov/servlets/purl/1429272.
@article{osti_1429272,
title = {Gallium Oxide Large Area UV Sensors},
author = {Okur, Serdal and Tompa, Gary S. and Salagaj, Thomas and Lyle, Luke and Davis, Robert and Porter, Lisa},
abstractNote = {In this Phase I Program, we demonstrated the feasibility of a new generation of sensitive wide bandgap UV tunable photodiodes, which can detect small, fast pulses of UV lights and support detection of the Cherenkov light in crystals and glasses, scintillation light in neutrino, dark matter, and rare decay experiments. We believe the new tunable UV photodetector can replace the photomultiplier tubes in Cherenkov, neutrino, and dark matter detectors and save on size, weight, and required power. Furthermore, the SBIR team anticipates a variety of commercial applications for the UV photodetectors developed in this program. Solar- and visible-blind UV PDs are widely used in military, industrial, and commercial applications and are needed for applications, from solar observations, UV astronomy, missile tracking, automatization, short-range communication security, as well as environmental and biological research. Efficient large area wide bandgap semiconductor PDs can be used to support the detection of spacecraft based radiation as well. In summary, Ga2O3–based UV photodiodes were fabricated and characterized in this project. β-Ga2O3 layers were grown on sapphire and single crystal bulk Ga2O3 substrates. Tunability of energy bandgap of the Ga2O3 in UVA, UVB, and UVC ranges were accomplished by alloying Ga2O3 with Al2O3 and In2O3. Feasibility of the Ga2O3–based UV photodiodes was tested using MOCVD growth of Ga2O3 and its alloys on sapphire and bulk Ga2O3 substrates, both of which were successfully demonstrated. High photo-to-dark current ratio and very low dark currents are achieved for the UV photodiodes.},
doi = {10.2172/1429272},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}