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Title: Model for Triggered Vacuum Switches.


Abstract not provided.

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Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Proposed for presentation at the 6th International Workshop on Mechanisms of Vacuum Arcs held March 19-23, 2017 in Jerusalem, Israel.
Country of Publication:
United States

Citation Formats

Moore, Christopher Hudson, Fierro, Andrew S., and Hopkins, Matthew M. Model for Triggered Vacuum Switches.. United States: N. p., 2017. Web.
Moore, Christopher Hudson, Fierro, Andrew S., & Hopkins, Matthew M. Model for Triggered Vacuum Switches.. United States.
Moore, Christopher Hudson, Fierro, Andrew S., and Hopkins, Matthew M. Wed . "Model for Triggered Vacuum Switches.". United States. doi:.
title = {Model for Triggered Vacuum Switches.},
author = {Moore, Christopher Hudson and Fierro, Andrew S. and Hopkins, Matthew M.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 01 00:00:00 EST 2017},
month = {Wed Mar 01 00:00:00 EST 2017}

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  • Abstract not provided.
  • Abstract not provided.
  • Abstract not provided.
  • Photoconductive GaAs-switches are used to switch electrical power in excess of one Megawatt and on a time scale of nanoseconds and less. When operated at very high applied fields and triggered with low energy lasers, the electrical breakdown leads to the development of current filaments with a forward voltage which corresponds to an average electric field of several kV/cm. The temporal development of the electrical breakdown in semi-insulating GaAs has been studied by means of electrical and optical diagnostics, particularly with a recently developed electro-absorption technique. The observed phenomena are analogous to glow-to-arc transitions in electrical discharges in electronegative gases,more » where the attachment coefficient is a rapidly increasing function of the electric field. Semi-insulating GaAs is characterized by the presence of a large concentration of electron and hole traps, with trapping cross-sections which in certain cases increase with the electric field intensity. As field enhanced electron attachment in gas discharges, field enhanced trapping in semi-insulating semiconductors can lead to the formation of high field domains. Impact ionization of deep centers in these domains is assumed to cause the generation of an electron-hole plasma. This plasma serves as the nucleus for streamers which develop into a current channel and bridge the gap between the contacts. The continuity of the current flow at forward electric fields of kV/cm is assumed to be due to double injection.« less