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Title: Propagation of THz acoustic wave packets in GaN at room temperature

Abstract

We use femtosecond laser pulses to generate coherent longitudinal acoustic phonons at frequencies of 1–1.4 THz and study their propagation in GaN-based structures at room temperature. Two InGaN-GaN multiple-quantum-well (MQW) structures separated by a 2.3 μm-thick GaN spacer are used to simultaneously generate phonon wave packets with a central frequency determined by the period of the MQW and detect them after passing through the spacer. The measurements provide lower bounds for phonon lifetimes in GaN, which are still significantly lower than those from first principles predictions. The material Q-factor at 1 THz is found to be at least as high as 900. The measurements also demonstrate a partial specular reflection from the free surface of GaN at 1.4 THz. This work shows the potential of laser-based methods for THz range phonon spectroscopy and the promise for extending the viable frequency range of GaN-based acousto-electronic devices.

Authors:
 [1];  [2];  [2];  [2];  [3]; ORCiD logo [4];  [1];  [3];  [3];  [3];  [2];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. National Taiwan Univ., Taipei (Taiwan)
  3. Univ. of Houston, TX (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1429193
Alternate Identifier(s):
OSTI ID: 1419701
Grant/Contract Number:  
AC05-00OR22725; FG02-00ER15087
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 6; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Maznev, A. A., Hung, T.-C., Yao, Y.-T., Chou, T.-H., Gandhi, J. S., Lindsay, Lucas R., Shin, H. D., Stokes, D. W., Forrest, R. L., Bensaoula, A., Sun, C.-K., and Nelson, K. A.. Propagation of THz acoustic wave packets in GaN at room temperature. United States: N. p., 2018. Web. doi:10.1063/1.5008852.
Maznev, A. A., Hung, T.-C., Yao, Y.-T., Chou, T.-H., Gandhi, J. S., Lindsay, Lucas R., Shin, H. D., Stokes, D. W., Forrest, R. L., Bensaoula, A., Sun, C.-K., & Nelson, K. A.. Propagation of THz acoustic wave packets in GaN at room temperature. United States. doi:10.1063/1.5008852.
Maznev, A. A., Hung, T.-C., Yao, Y.-T., Chou, T.-H., Gandhi, J. S., Lindsay, Lucas R., Shin, H. D., Stokes, D. W., Forrest, R. L., Bensaoula, A., Sun, C.-K., and Nelson, K. A.. Mon . "Propagation of THz acoustic wave packets in GaN at room temperature". United States. doi:10.1063/1.5008852.
@article{osti_1429193,
title = {Propagation of THz acoustic wave packets in GaN at room temperature},
author = {Maznev, A. A. and Hung, T.-C. and Yao, Y.-T. and Chou, T.-H. and Gandhi, J. S. and Lindsay, Lucas R. and Shin, H. D. and Stokes, D. W. and Forrest, R. L. and Bensaoula, A. and Sun, C.-K. and Nelson, K. A.},
abstractNote = {We use femtosecond laser pulses to generate coherent longitudinal acoustic phonons at frequencies of 1–1.4 THz and study their propagation in GaN-based structures at room temperature. Two InGaN-GaN multiple-quantum-well (MQW) structures separated by a 2.3 μm-thick GaN spacer are used to simultaneously generate phonon wave packets with a central frequency determined by the period of the MQW and detect them after passing through the spacer. The measurements provide lower bounds for phonon lifetimes in GaN, which are still significantly lower than those from first principles predictions. The material Q-factor at 1 THz is found to be at least as high as 900. The measurements also demonstrate a partial specular reflection from the free surface of GaN at 1.4 THz. This work shows the potential of laser-based methods for THz range phonon spectroscopy and the promise for extending the viable frequency range of GaN-based acousto-electronic devices.},
doi = {10.1063/1.5008852},
journal = {Applied Physics Letters},
number = 6,
volume = 112,
place = {United States},
year = {Mon Feb 05 00:00:00 EST 2018},
month = {Mon Feb 05 00:00:00 EST 2018}
}

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Works referenced in this record:

Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965