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Title: Selective, electrochemical etching of a semiconductor

Abstract

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Inventors:
; ;
Publication Date:
Research Org.:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1429084
Patent Number(s):
9,922,838
Application Number:
15/116,041
Assignee:
Rensselaer Polytechnic Institute, Troy, NY ARPA-E
DOE Contract Number:  
AR0000304
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Feb 10
Country of Publication:
United States
Language:
English

Citation Formats

Dahal, Rajendra P., Bhat, Ishwara B., and Chow, Tat-Sing. Selective, electrochemical etching of a semiconductor. United States: N. p., 2018. Web.
Dahal, Rajendra P., Bhat, Ishwara B., & Chow, Tat-Sing. Selective, electrochemical etching of a semiconductor. United States.
Dahal, Rajendra P., Bhat, Ishwara B., and Chow, Tat-Sing. Tue . "Selective, electrochemical etching of a semiconductor". United States. doi:. https://www.osti.gov/servlets/purl/1429084.
@article{osti_1429084,
title = {Selective, electrochemical etching of a semiconductor},
author = {Dahal, Rajendra P. and Bhat, Ishwara B. and Chow, Tat-Sing},
abstractNote = {Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 20 00:00:00 EDT 2018},
month = {Tue Mar 20 00:00:00 EDT 2018}
}

Patent:

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